ScholarWorks@SUNGKYUNKWAN UNIVERSITY: LEE, SUNG JOO

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LEE, SUNG JOO (이성주)

SKKU Advanced Institute of Nano Technology

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MXene:7||MoS2:5||graphene:4||WSe2:4||black phosphorus:4||photodetectors:4||transistor:3||work function:3||nondegenerate doping:2||OTS:2||heterostructure:2||flexible:2||heterostructures:2||optoelectronic device:2||direct CVD growth:2||Graphene:2||doping:2||organic fieldeffect transistor:2||ReS2:2||large area:2||photodetector:2||twodimensional MXene:2||Schottky barrier:2||electronic device:2||Kelvin probe force microscopy:2||negative differential transconductance:2||Black phosphorus:2||hBN:2||avalanche photodetector:2||Double lateral homojunction:1||EHD printing:1||Electromagnetic interference:1||Energy harvesting:1||Gate all around (GAA):1||Graphene barristor:1||HCl doping:1||Hexagonal boron nitride:1||Hybrid:1||Impact ionization:1||Inplane heterostructure:1||In0.53Ga0.47As metaloxidesemiconductor fieldeff:1||InSe:1||Interactive:1||Joule heating:1||MDNA:1||MOS2:1||MXeneTiO:1||Mo2C:1||MoS2 nanoparticles:1||Mobility:1||Multivalue logic devices:1||Nanoelectronic devices:1||Nanoparticle density:1||Negative differential conductance:1||Nonequilibrium firstprinciples calculations:1||O2 plasma:1||OFET:1||Organic thermoelectrics:1||Organic transistor:1||PEDOT:PSS:1||PPh3:1||PVP/PMF:1||Photodetector:1||Piezopotential modulation:1||Pulsed voltage measurement:1||ReSe2:1||Seebeck coefficient:1||Silicon nanowires:1||Silver nanowire:1||Steep subthreshold slope:1||Steep switching:1||Subthreshold swing (SS):1||Surface potential:1||Thin films:1||TiS bond:1||TiCxcrystals:1||Topdown:1||Trapassisted tunneling:1||Triboelectric nanogenerator:1||Tunneling fieldeffect transistor (TFET):1||Twodimensional materials:1||Twodimensional vanderWaals layered materials:1||Vertical heterostructure:1||Vertical silicon nanowire (SiNW):1||WSe<:1||adsorption:1||ambipolar transistor:1||artificial synapse:1||artificial synapses:1||atomic layer etching:1||atomic layer etching (ALE):1||atomic switch:1||avalanche photodetectors:1||barristors:1||betamercaptoethanol:1||bipolar doping:1||braininspired neuromorphic computing:1||broad spectral photoresponse:1||broadspectrum photodetector:1||broadband photodetection:1||broadband photodetector:1||catalytic transparency:1||charge polarity:1||chemical conversion:1||chemical vapor deposition:1||conjugated polymers:1||controllable doping:1||convolutional neural network:1||covalent chemistry:1||def:1||defect engineering:1||desorption:1||detectivity:1||device performance:1||diazonium chemistry:1||dichalcogenides:1||dithienopyrroles:1||electrical conductivity:1||electrochemical water splitting:1||electrode:1||electrodes:1||electronic properties:1||electronics:1||endurance:1||environmental stability:1||ferroelectric memory:1||ferroelectric semiconductors:1||ferroelectric transistor:1||ferroelectrics:1||ferroelectronics:1||field effect transistor:1||field effect transistors (FETs):1||fieldeffect transistors:1||floatinggate:1||functional devices:1||functionalization:1||growth mode:1||handwritten digit pattern recognition:1||heatdenaturation:1||heterojunctions:1||hexagonal boron nitride:1||highly sensitive:1||hybrid 0D2D junctions:1||hybrid heterojunction:1||ideal CVD template:1||inkjet printing:1||largescale integration:1||lateral contact:1||lateral junction:1||layer by layer etching:1||line etching:1||logic circuit:1||lowenergy Ar+ion:1||lowvoltage circuit:1||lowvoltage device:1||membraneless structure:1||memory devices:1||memory window:1||metal buffer:1||metal halide:1||metal semiconductor junction:1||molecular doping:1||molybdenum disulfide (MoS2):1||molybdenum disulfide nanoparticles:1||monolithic:1||multiplevalued logic:1||multivalued logic:1||nanoparticles:1||nanophotonic device:1||nanoscale 2D material:1||nanoscale fieldeffect
transistor (FETs):1||negative differential resistance:1||neural devices:1||neuromorphic devices:1||nondegenerate doping:1||nondegenrate doping:1||nonvolatile memory:1||onchip cooling:1||optical activation:1||optoelectronic devices:1||optoelectronics:1||organic dye:1||organic electronics:1||organic semiconductors:1||organic thermoelectrics:1||pdoping:1||peaktovalley current ratio:1||photoresponse enhancement:1||photoresponsivity:1||plasma:1||plasma etching:1||plasmonic effect:1||plasmonic effects:1||platinum diselenide:1||power:1||protein:1||pyramids:1||quaternary inverter:1||reduced graphene oxide:1||resistive memory:1||resistive random access memory:1||responsivity:1||reusable:1||rhenium diselenide:1||salmon DNA:1||selective doping:1||selective etching:1||selfassembled layers:1||semiconductors:1||silicon nanowire (SiNW):1||solution processing:1||stability:1||sub>:1||surface functionalization:1||surface plasmons:1||synaptic devices:1||thermal activation:1||thermoelectric:1||thinfilm transistors:1||transition metal carbide:1||transition metal dichalcogenides:1||transition metal dichalcogenides (TMDs):1||transitionmetal dichalcogenides (TMDs):1||trapassisted tunneling:1||triphenylphosphine:1||twodimensional (2D) material:1||twodimensional material:1||twodimensional materials:1||typeconverted FET:1||van der Waal heterostructures:1||van der Waals:1||van der Waals ferroelectric heterostructures:1||van der Waals heterojunction:1||van der Waals heterostructure:1||van der Waals materials:1||vdW material:1||vertical transistor:1||widerange:1||(2):1||workfunction tunability:1||(3aminopropyl)triethoxysilane:1||/sub>:1||2<:1||2D material:1||2D thickness control:1||2dimensional material:1||2D MXenes:1||2D WSe 2:1||2D heterostructure:1||2D layered material:1||2D material:1||2D materials:1||ADA structure:1||APTES:1||Au nanoparticles:1||BioFET:1||Bipolar switching:1||CMOS technology:1||CVD growth mechanism:1||Carbon fiber:1||Carrier multiplication:1||Cement composite:1||Charge trapping:1||Chemical vapor deposition:1||Conducting polymers:1||DNA:1||Direct chemical vapor deposition growth:1||Doping control of 2D material:1||

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(03063) 25-2, SUNGKYUNKWAN-RO, JONGNO-GU, SEOUL, KOREAsamsunglib@skku.edu

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