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KIM, SUNG WNG (김성웅)
Graduate School (Energy Science)
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Thermoelectric:24||Doping:8||Lattice thermal conductivity:6||electride:4||doping:4||superconductivity:4||transition metal dichalcogenides:4||Bi2Te3:4||Thermal conductivity:3||lattice thermal conductivity:3||Bi0.5Sb1.5Te3:3||Thermoelectrics:3||thermoelectrics:3||bismuth antimony telluride:3||Bipolar conduction:3||graphene:3||Effective mass:3||2<:3||thermal conductivity:2||thermoelectric:2||Seebeck coefficient:2||Phonon scattering:2||thermoelectricity:2||phonon scattering:2||2D materials:2||thin film:2||bipolar conduction:2||Weighted mobility:2||Crystal orientation:2||electrides:2||inf>:2||electrical transport:2||Nanocomposite:2||/inf>:2||/sub>:2||layered structures:2||sub>:2||scanning tunneling microscopy:2||Graphene:2||Thermoelectric properties:2||van der Waals epitaxy:2||Defect engineering:1||Dislocation arrays:1||Double halfHeusler:1||EIS:1||Electrical conductivity:1||Electrides:1||Electrodeposition:1||Electronic and thermal transport properties:1||Energy harvesting:1||Excess Cu doping:1||Excess Te:1||FeNiSb<:1||Fermi level:1||Filling fraction:1||Fracture toughness:1||Frequencydependent phonon scattering:1||Grain boundary:1||Grainboundary:1||Halfheusler:1||Homointerface:1||Insitu reduction:1||Intercalation:1||Interstitial defect:1||Interstitial site:1||Iodine:1||Magnesium silicide:1||Melt spinning:1||Meltsolidification process:1||Mg2Si:1||Minority carrier mobility:1||MoS2:1||MoTe2:1||Multiple defect structure:1||Multiple filled skutterudites:1||Nanocomposites:1||Nanograin:1||Nanoparticle:1||Nanostructure:1||Nonoxidized copper particles:1||Pavonite homolog:1||Peierlstype lattice distortion:1||Polarization:1||Power factor:1||Power generation:1||Pt(II) complex:1||Raman spectroscopy:1||Rattling:1||Raw material:1||Reduced graphene oxides:1||Rietveld refinement:1||Ru:1||SPS:1||STEMEDX spectrum Imaging:1||Sbrich nanoprecipitate:1||Semicoherent interface:1||Si:1||Single parabolic band model:1||Sintering conditions:1||Solid state reaction:1||Solidstate cooling:1||Solvothermal synthesis:1||Spark plasma sintering:1||Spinpolarized electrons:1||SrTiO3:1||Te<:1||TeVacancy:1||Thermal reduction:1||Thermoelectric material:1||Thin film:1||Ti<:1||Transport properties:1||Twodimensional ferromagnetism:1||Ultraviolet photoelectron:1||Van der Waals materials:1||Waste heat:1||Weyl semimetallic states:1||Work function:1||XPS:1||[Ca24Al28O64]4+(e )4:1||[Ca2N]+·e:1||alkali metal:1||alkali metals:1||alphaAl2O3:1||ammonia synthesis:1||anionic metallic layer:1||antiferromagnets:1||antiperovskites:1||atomic doping:1||band convergence:1||band engineering:1||bismuth telluride:1||chemical potential:1||chemical vapor deposition:1||codoping:1||contact resistance:1||defectinduced ferromagnetism:1||density functional theory calculations:1||diffusion barrier:1||dislocation arrays:1||dislocation scattering:1||electric field effect:1||electron charge density:1||electron diffusion:1||electron injection:1||electron transfer:1||electronic state:1||electronic structures:1||electrostatic potential:1||epitaxial films:1||epitaxy:1||exothermic reaction:1||ferromagnetism:1||fieldeffect transistors:1||firstprinciples study:1||grain boundary engineering:1||grain boundary scattering:1||growth mechanism:1||halfHeusler:1||heavy fermions:1||heterogeneous catalysts:1||hierarchical dielectric ordering:1||high pressure:1||high surface area:1||hydrogen evolution reaction:1||indium chain:1||interface:1||interlayer weakening:1||magnetic anisotropy:1||magnetic semiconductors:1||melt spinning:1||minority carrier filtering:1||molybdenum disulfide:1||multilayered graphene:1||multiphase transition:1||nanostructuring:1||negatively charged surfaces:1||nonFermiliquids:1||nonoxidized bare copper nanoparticles:1||nonoxidized metal nanoparticles:1||nonsymmorphic symmetry:1||optical spectroscopy:1||perovskite oxides:1||phase transition:1||photoreducing agent:1||pnictogen chalcogenides:1||point defect:1||point defects:1||polycrystalline materials:1||polymorphism:1||posttransition metal dichalcogenide:1||promoters:1||proximity engineering:1||pulsed laser deposition:1||quality factor:1||radical generation:1||scanning tunneling microscopy (STM):1||semiconductor:1||singlecrystal Bi2Te3:1||spark plasma sintering:1||spectroscopy:1||surface charge density wave:1||surface electronic structures:1||surfaceaccumulated excess electrons:1||thermoelectric materials:1||thermoelectric power factor:1||thermopower waves:1||thin films:1||topological insulator:1||topological semimetal:1||topotactic phase transformation:1||transition metal dichalcogenide:1||tricritical behavior:1||van der Waals (vdW) materials:1||van der Waals interaction:1||visualization of local polarization:1||weighted mobility ratio:1||wet chemical syntheses:1||work function:1||:1||yttrium hypocarbide (Y2C) electride:1||2D electron gas:1||2D layered materials:1||2D transport:1||3<:1||Ag:1||AlGaN/GaNMOSHEMT:1||Anionic electrons:1||Antisite defect:1||Atomic scale mapping:1||Atomicscale defect disorder:1||Band engineering:1||Band modification:1||Bi–Tebased alloys:1||Bi 2 Te 2.7 Se 0.3:1||Bi 2 Te 3:1||Bi<:1||Bi2(Te,Se)(3):1||BiSbTe:1||Bi0.36Sb1.64Te3:1||Bi04Sb16Te3 Spark Plasma Sintering:1||Bi2Te2.7Se0.3:1||Bi2Te2·7Se0.3:1||Bipolar thermal conductivity:1||Bismuth antimony telluride:1||CaH2:1||Callaway model:1||Carrier tuning:1||Casimir model:1||Charge distribution:1||Chemical doping:1||Coherent interface:1||Complex structure:1||Composites:1||CrSiTe 3:1||Crystal structure:1||Crystallographic structure:1||Cu doping:1||Cu incorporation:1||Cuincorporation:1||DebyeCallaway model:1||
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