ScholarWorks@SUNGKYUNKWAN UNIVERSITY: KIM, YONG HOON

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KIM, YONG HOON (김영훈)

Engineering (Advanced Materials Science and Engineering)

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solution process:8||thinfilm transistors:8||Thinfilm transistors:8||thinfilm transistor:6||amorphous oxide semiconductors:6||Solution process:5||High mobility:4||IGZO:3||low temperature:3||Photochemical activation:3||oxide semiconductors:3||pattern recognition:3||quantum dots:3||flexible electronics:3||Thinfilm transistors (TFTs):3||TIPSpentacene:3||photochemical activation:3||indiumgalliumzinc oxide:3||optoelectronic synapses:2||optoelectronics:2||transistors:2||amorphous IGZO:2||Flexible electronics:2||memristors:2||electronic textiles:2||Thin film transistors:2||Bilayer:2||Thinfilm encapsulation:2||metal oxides:2||Mesoscale:2||Polymer solar cell:2||PEDOT:2||monolithic passivation:2||stretchable electronics:2||Stability:2||phototransistor:2||plasmainduced metallization:2||Photonic neurotransistors:2||gas sensor:2||Gate dielectric:2||Sheet Resistance:2||neuromorphic computing:2||Organic crystal:2||Silver Nanowires:2||room temperature:2||Metaloxide semiconductors:2||thinfilm transistors (TFTs):2||Perfluoropolymer:2||Highk:1||Highk dielectric:1||Hybrid Structure:1||Hybrid ambipolar TFTs:1||Hybrid gate dielectric:1||Hydrogen assisted annealing:1||IGZO heterostructures:1||IGZOCapped:1||ISZO:1||ITO Nanoparticles:1||ITZO:1||IZO:1||Insensor computing:1||InGaZnO:1||IndiumTin oxide (ITO) nanoparticle inks:1||IndiumZincTinOxide:1||Indiumgalliumzincoxide:1||Inkjet printing:1||Ion gel gate dielectric:1||Iongel:1||Ionic liquid:1||Ionotronic:1||Joule heating:1||Lanthanum aluminum oxide:1||Lanthanumdoped aluminum oxide:1||Layerbylayer assembly:1||Low temperature:1||Low temperature solutionprocess:1||Lowtemperature polycrystalline silicon (LTPS):1||Metal oxide:1||Metal oxides:1||MetalOxide:1||Metalchalcogenide semiconductor:1||Metaloxide:1||Metaloxide (MO) semiconductors:1||Metaloxide back coating:1||Metallic capping layer:1||Mg diffusion:1||MultiStacked:1||Multisensory system:1||Multispectral synaptic response:1||Na:ZnO:1||Nanocluster:1||Nanocrystalline tellurium:1||Nanotechnology:1||Nearsensor computing:1||Neuromorphic devices:1||Neuromorphic vision sensor:1||Neuronal dendritic computation:1||Optical Transmittance:1||Optical transmittance:1||Optically clear resin films:1||Optoelectronic synapse:1||Optoelectronic synapse arrays:1||Optoelectronic synaptic circuit:1||Optoelectronics:1||Organic thin film transistor:1||Oxide nanowire:1||Oxide semiconductors:1||Oxide thinfilm transistors:1||PANi:1||PBS Stability:1||PSS:1||PVDFHFP:1||Pattern recognition:1||Persistent high surfaceenergy:1||Persistent photoconductance, metaloxide semiconductors:1||Photostability:1||Photoabsorber:1||Photochemical Activation:1||Photochemical Annealing:1||Photonic synapse:1||Phototransistor:1||Phototransistors:1||Photovoltaic performance:1||Polyelectrolyte multilayers:1||Powerefficiency:1||Rollable metal oxide TFT:1||Room temperature:1||Room temperature growth:1||SWCNTs:1||Schottky barrier:1||Semiconductortype gas sensor:1||Sensor system:1||Silicon solar cells:1||Sn diffusion:1||Solar Cell:1||Solar window modules:1||Solution Process:1||Solution combustion synthesis:1||Solution processing:1||SolutionProcessed Oxide Semiconductors:1||Solutionprocessing:1||Sputtering technology:1||Stretchability:1||Strontium Nitrate:1||Strontiumdoped aluminum oxide:1||Subthreshold Slope:1||Surface structure modification:1||Synapses:1||Synaptic parameters:1||TCAD simulations:1||TFT:1||Teflon:1||Thermal Stability:1||Thermal annealing:1||Thin film transistor:1||ThinFilm Transistor:1||ThreeStep Selenization:1||Ti doping:1||TiO2:1||TiOx:1||Transfer printing:1||Transparent:1||Transparent Conductor:1||Transparent electrodes:1||UV curing technology:1||UVLED:1||Ultralow temperature:1||Vacuum deposition:1||Vanadium oxide nanowires:1||Wearable device:1||ZTO:1||ZnSnO:1||aIGZO:1||activematrix sensors:1||alloptical neuromorphic devices:1||allsolution processed transparent largescale electronics:1||alternative photoconversion:1||aluminumoxo cluster:1||ammonia sensor:1||amorphous metal oxide semiconductors:1||amorphous oxide semiconductor:1||amorphous oxide thinfilm transistors:1||analog processing:1||and nanocrystals:1||anion alloying:1||applications:1||artificial retinas:1||artificial sensory systems:1||artificial skins:1||artificial synapse:1||artificial vision systems:1||band bending:1||bidirectional synaptic modulation:1||bilayer:1||biosensor applications:1||blade coating metal oxide semiconductor:1||cAxis aligned crystalline:1||capacitive pressure sensors:1||carbon nanotubes:1||catalytic metalsaccelerated crystallization:1||chalcogenide semiconductors:1||chalcometallate ligands:1||cheap electronics:1||chemical synthesis:1||circuit:1||colloidal quantum dot:1||color recognition:1||coloration efficiency:1||combustion synthesis:1||complelentary metaloxidesemiconductor (CMOS) integrated circuits:1||complementary amplifier:1||complementary circuit amplifiers:1||composition ratios:1||conducting fiber:1||conductive textile:1||conjugated polymer:1||contact area:1||contact resistance:1||controllable threshold voltage:1||corrugated structures:1||cosputtering:1||crossreactive sensor matrixes:1||current amplification circuits:1||deep UV irradiation:1||deep ultraviolet (DUV) photochemical activation:1||derivative spectroscopy:1||device structures:1||diFTESADT:1||diffusion and convection:1||direct surface modification:1||direction recognition:1||doping:1||dual fuel:1||dynamic photoresponse:1||etextile:1||electric double layer:1||electric double layer (EDL):1||electrical/electronic materials:1||electrochromic:1||electronic skin:1||electronic textile:1||endurance:1||fiber transistors:1||fiberbased batteries:1||fiberbased sensors:1||fiberbased transistors:1||fiberbased wearable electronics:1||film transistors:1||films:1||flexible amplifier circuits:1||flexible electrode:1||flexible optoelectronics:1||flexible photodetectors:1||fluidic channel:1||fluoropolymer passivation:1||geometrical design:1||heatinduced peelable:1||heterointerfaces:1||heterojunction:1||heterojunction channel:1||heterojunction phototransistors:1||heterojunction structures:1||heterostructure:1||heterostructure phototransistors:1||high mobility:1||hybrid structures:1||hysteresisfree:1||in situ polymerization:1||inkjet printing:1||insulatortosemiconductor transition:1||ion gel:1||iongel:1||ionic electrolyte transistor:1||ionic liquid:1||ionotronic synaptic transistors:1||iron phthalocyanine:1||lattice stabilization effect:1||ligand exchange:1||light activation:1||light intensity:1||lightadjustable neuromorphic circuits:1||liquidcontactelectrification:1||lowtemperature crystallization:1||lowtemperature functionalization:1||lowtemperature metal oxide:1||lowtemperature process:1||lowtemperature processing:1||machine learned strain sensors:1||machine learning:1||machinelearning sensors:1||magnesium (Mg) doping:1||mechanical stability:1||meniscus movement:1||mesa structure:1||mesaisland structure:1||metal chalcogenide:1||metal doping/diffusion:1||metal ionic radius:1||metal oxide semiconductor and dielectric:1||metaloxide thinfilm transistors:1||metallosupramolecular polymer:1||microwire transistor:1||molybdenum disulfide:1||monolithic integration:1||monolithic thinfilm transistor:1||multicomponent oxide semiconductors:1||multilevel memory:1||multiple nonvolatile detection:1||nanoflowers:1||nanoparticles:1||nanostructured materials:1||nanowires:1||neuromorphic:1||omnidirectional strain sensors:1||opticaldoping:1||optically driven synaptic device:1||optoelectronic devices:1||optoelectronic neuromorphic systems:1||organic crystal:1||organic thinfilm transistor:1||organic/oxide heterogeneous circuits:1||oxide:1||oxide gate dielectric:1||oxide semiconductor:1||oxide thinfilm transistors:1||oxygen vacancy:1||oxygenvacancy control:1||pType transistor:1||ptype:1||persistent photoconductivity:1||photoregeneration:1||photosynaptic plasticity:1||photoactivation:1||photochemically driven combustion process:1||photonic devices:1||photonic neuromorphic devices:1||photonic synapses:1||photopic and scotopic adaptation:1||phototransistors:1||poly(vinylidene fluoride) copolymer:1||polymer:1||polymer gate dielectric:1||pressure sensor:1||pressure sensors:1||pressuresensitive adhesive:1||radical reaction:1||reduced graphene oxide:1||resistive switching behaviour:1||scalability:1||scanning photocurrent microscopy:1||selective dewetting:1||selfaligned:1||semiconductors:1||sensitivity:1||sensors:1||side gate geometry:1||singlecrystal organic semiconductor:1||singlewalled carbon nanotubes (SWCNTs):1||skincompatible and biocompatible electronics:1||skinlike sensor arrays:1||solgel:1||solgel metal oxides:1||solgel oxide:1||solution processes:1||solution processing:1||solutionbased synthesis:1||solutionprocess:1||solutionprocessed amorphous oxide semiconductor (AOS):1||solutionprocessed metal oxide:1||solutionprocessed metal oxides:1||solutionprocessed metaloxide gate dielectrics:1||stacking sequence:1||strain sensor:1||stress release:1||stressdiffusion:1||stretchable sensor:1||subtenth micron thickness:1||superlattices:1||support vector regression:1||suppression of residual impurities/mobile ions:1||surface passivation:1||switching stability:1||symmetrically gated structure:1||synapses:1||synaptic devices:1||tactile sensor arrays:1||textile sensor:1||thermotherapy:1||thin film transistor:1||thin films:1||thin&:1||threadlike fiber electronic devices:1||titanium dioxide:1||titanium oxide:1||topgate:1||transparent capping:1||transparent conducting electrodes:1||ultraflexible electronics:1||ultraflexibility:1||ultraviolet:1||ultraviolet irradiation:1||ultraviolet photoelectron spectroscopy (UPS):1||vertical transistor:1||visiblelight sensing:1||volatile organic compounds:1||washable:1||water stability:1||water treatment:1||wearable devices:1||wearable electronic:1||wearable electronics:1||wireless:1||workfunction tunability:1||#8208:1||zeolite:1||Aging:1||Al2O3:1||Amorphous metaloxide semiconductor:1||Amorphous silicon thinfilm transistors (aSi:H):1||Applied sciences:1||Aqueous solution:1||Ar Plasma:1||Associative learning:1||BIPV window:1||Bandbending:1||Bending:1||Bilayer oxide TFT:1||Capacitive pressure sensors:1||Carbon nanotube:1||Cofuel:1||Color Coordination:1||Complementary metaloxide semiconductors (CMOS):1||Conducting fiber:1||Conventional thermal annealing:1||Crossbar structure:1||CuInSe2:1||DUV irradiation:1||Damp heat test:1||Deep UV photochemical activation:1||Deep spikelike:1||Deep ultraviolet:1||Deep ultraviolet photo annealing:1||Doublestacked:1||Dual channel conduction:1||Dualgate:1||Electric double layer:1||Electrodeposition:1||Electronic textiles:1||Electrospinning:1||Enhancementload inverter:1||Fieldeffect transistor:1||Flexibilty:1||Flexible:1||Flexible metal oxide gate dielectric:1||Flexible/stretchable electronics:1||Gadoped In2O3:1||Gadoliniumdoped hafnium oxide:1||Gate Dielectric:1||Gate dielectrics:1||Hall measurements:1||Heterogeneous semiconducting structure:1||Heterostructure:1||

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(03063) 25-2, SUNGKYUNKWAN-RO, JONGNO-GU, SEOUL, KOREAsamsunglib@skku.edu

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