ScholarWorks@SUNGKYUNKWAN UNIVERSITY: YU, WOO JONG

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YU, WOO JONG (유우종)

Information and Communication Engineering (Electronic and Electrical Engineering)

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graphene:9||molybdenum disulfide:4||carbon nanotubes:3||heterostructure:3||chemical vapor deposition:3||van der Waals heterostructure:3||2D materials:3||van der Waals heterostructures:3||tin diselenide:2||heterostructures:2||onestep synthesis:2||MoS2:2||tunneling:2||Schottky barrier height:2||phototransistor:2||Ion Implantation:1||Li intercalation:1||Memristor:1||MoS2 transistor:1||Nitrogen:1||Optoelectronic devices:1||Oxygen:1||QLEDs:1||Raman spectra:1||Schottky:1||Shockley and Queisser (SQ) limit:1||Solar cell:1||Van der Waals heterostructure:1||WSe2:1||alloys:1||ambipolar:1||atom dispersions:1||bipolar junction transistor:1||broadband detection:1||contact resistance:1||current gain:1||degenerate:1||doping:1||fast response:1||field effect transistor:1||field effect transistors:1||fieldeffect transistors:1||flexible electronics:1||flexible memristors:1||floating gates:1||functional diodes:1||gC3N4:1||gas sensors:1||graphdiyne:1||graphene oxide:1||graphene random mesh:1||hBN:1||hBN dielectric:1||heterostructure transistors:1||hexagonal boron nitride:1||high responsivity:1||highkappa:1||highly effective heterojunction:1||hole injection layers:1||hot carrier:1||hot electron:1||hysteresis:1||inmemory computing:1||indium zinc oxide:1||infrared:1||inhomogeneous charge transport:1||intercalation structures:1||interface engineering:1||interface resistances:1||internal quantum efficiency:1||internal responsivity:1||manufacturing:1||memtransistors:1||metallic TMDs:1||mobility:1||molybdenum diselenide:1||mono and cluster vacancies:1||nanoarchitecture:1||nanofabrication:1||nanopatterning:1||nanoribbon:1||nanotechnology:1||nanotube:1||nanotubes:1||nanowire:1||negative differential resistance:1||ohmic contact:1||onestep growth:1||pattern growth:1||phase transitions:1||photodetector:1||photodetectors:1||photodiode:1||photoinduced memory:1||piezophotocatalysis:1||polymorphism:1||printing:1||program/erase performance:1||promoting solution coating:1||quantum dots:1||schottky barrier height:1||schottky barriers:1||selective doping control:1||selfassembly molecule:1||selfpowered Research:1||sensors:1||short channel:1||short channel effect:1||silicon compounds:1||strain:1||substitution doping:1||substitutional doping:1||subthreshold swing:1||thin film devices:1||thinfilm fieldeffecttransistor:1||transistor:1||transition metal dichalcogenides:1||transitionmetal dichalcogenide lateral heterostructure:1||transitionmetal dichalcogenides:1||transparent transistors:1||tungsten diselenide:1||ultrafast charge transfer:1||vanadiumdoped tungsten diselenide:1||vertical carrier transport mechanism:1||vertical fieldeffect transistor:1||vertical fieldeffect transistors:1||2D material:1||zinc oxides:1||2D nanomaterials:1||2D tunneling heterojunction:1||2D tunneling heterojunctions:1||Carbon Nanotubes:1||Carbon nanotubes (CNTs):1||Chemical vapor depositions:1||Doping:1||Dual gate:1||Electronic:1||Esaki diode:1||GS junction:1||Graphene:1||Graphene/silicon:1||Heterojuction:1||

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(03063) 25-2, SUNGKYUNKWAN-RO, JONGNO-GU, SEOUL, KOREAsamsunglib@skku.edu

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