ScholarWorks@SUNGKYUNKWAN UNIVERSITY: CHA, SEUNGNAM

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CHA, SEUNGNAM (차승남)

Science (Physics)

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MoS2 monolayer:4||quantum dots:4||hydrogen evolution reaction:3||tactile sensor:3||contact engineering:2||ferroelectric effect:2||lightemitting diodes:2||doping:2||Quantum dot:2||printed electronics:2||carbon nanotube (CNT):2||supercapacitors:2||flexible photodetector:2||Encapsulation:1||Energy storage devices:1||Energy storage system:1||Faradaic redox reaction:1||Fast charging anode:1||Graphene nanohoneycomb sponge:1||Heterogeneous synthesis:1||High surface area:1||Inelastic scattering:1||Interfacial polarization:1||Liion battery:1||Light scattering:1||Mo1 xWxS2 alloy:1||MoS:1||MoS(2)monolayer:1||MoS2 monolayers:1||NanoARPES:1||Ne18(a,p)Na21:1||Nearfield oscillation:1||Ni–S–O compound:1||Orientedattachment:1||P(VDFTrFE):1||Ptype doping:1||PbS quantum dots:1||Piezoelectric device:1||Piezoelectric material:1||Piezoelectric sensor:1||Plasmonic effect:1||Polymerassisted transfer:1||Quantum chain:1||Quantum dot solar cell:1||RF transmission line:1||RI beam:1||Reduced binary anion:1||Reduction time:1||Seebeck effect:1||Selfassembly:1||Signal analysis:1||Signal processing:1||Surface modification:1||Tailored oxygen vacancy:1||Zn electrode:1||Zn ion capacitor:1||ZnO nanowire:1||adsorbed molecules:1||adsorption isotherm:1||alphacluster structure:1||amorphous carbon:1||artificial pain feeling:1||builtin potential:1||charge carrier dynamics:1||charge carrier transport:1||charge transfer:1||chemical vapor deposition:1||chemical vapor deposition (CVD):1||concentration photovoltaics:1||copper sulfide:1||coreshell structure:1||crystal orientations:1||density functional theory:1||dipole structures:1||electrocatalysis:1||electrode dopants:1||electromagnetic interference shielding:1||electron microscopy:1||electronic skin:1||energy level engineering:1||energy level properties:1||explosive stellar environments:1||fast photodetectors:1||fiber electronics:1||flexible devices:1||flexible electronics:1||germanium:1||graphene:1||graphene electrode:1||graphene transistor:1||growth parameters:1||halide doping:1||heterojunction interface:1||hexagonal boron nitride:1||hierarchical structures:1||high mobility transistor:1||hybrid energy harvesting:1||hybrid phototransistors:1||indoor solar cells:1||inkjet printing:1||iodine doping:1||layered separator:1||lead sulfide quantum dots:1||lithium metal anode:1||low subthreshold swing:1||mechanical energy harvesting:1||molybdenum disulfide:1||molybdenum disulfide (MoS2):1||molybdenum disulphide (MoS2):1||monolayered MoS2:1||morphology:1||multiphoton absorption:1||ndoping effect:1||nanometer channel:1||nanowire:1||nuclear cluster:1||ohmic contacts:1||one pot doping:1||onepot CVD synthesis:1||orientation control:1||overall water splitting:1||oxygen evolution reaction:1||patterned electrode:1||photoresponse behavior:1||photovoltaics:1||piezophototronic:1||piezoelectric effect:1||piezoelectricity:1||pintype module:1||polyvinyledenedifluoridetrifluoroethylene (PVDFTrFE):1||post chemical treatments:1||pyroelectric effect:1||rGO:1||reduced graphene oxide:1||resonant scattering:1||scalable fabrication:1||selfassembledmonolayer doping:1||selfcatalytic growth:1||selfcharging:1||selfhealing:1||semimetallic electrodes:1||shape detection:1||soft material:1||solar cell:1||strain engineering:1||supersaturation level:1||surface functionalization:1||surface topography:1||surface topography detection:1||surface treatment:1||surfaceenergy:1||thermal stability:1||thicktarget method in inverse kinematics:1||transition metal sulfide:1||transparent conductive electrodes:1||triboelectric energy generators:1||tunable switching threshold:1||twodimensional atomic crystal:1||ultrafast transient absorption spectroscopy:1||ultrasensitive photodetection:1||ultrathin thickness:1||vapor corrosion:1||vertical transistor:1||water splitting:1||(2):1||white light:1||2D electronics:1||2D heterostructure:1||2D structures:1||Chemical vapor deposition:1||Colloidal quantum dot:1||Controlled morphology tinning:1||CuS contact:1||CuS electrodes:1||CuS nanosheet:1||Depth profile detection:1||Depth profile measurement:1||Dielectric constant:1||

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(03063) 25-2, SUNGKYUNKWAN-RO, JONGNO-GU, SEOUL, KOREAsamsunglib@skku.edu

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