ScholarWorks@SUNGKYUNKWAN UNIVERSITY: NAH, WAN SOO

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NAH, WAN SOO (나완수)

Information and Communication Engineering (Electronic and Electrical Engineering)

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IEC 6100042:9||SParameters:7||Electrostatic Discharge (ESD):6||Sparameter:6||EMC:5||Reverberation chamber (RC):5||IEC 61000421:5||Sparameters:4||Field Uniformity:3||ESD generator:3||SParameter:3||EMI:3||Frequency domain:3||Bi2223/Ag tape:3||Noise source modeling:3||3D modeling:3||Surge:3||ESD source modeling:3||Switching harmonics:3||Conducted emission (CE):3||EM simulation:3||Radio frequency:3||Buck converter:3||Circuit modeling:3||System level ESD testing:3||EMI Filter:2||National Radio Research Agency (RRA):2||3D model:2||semicustom digital design:2||Capacitors:2||transfer characteristics:2||Odd Mode Delay:2||Screen printing:2||bulk current injection (BCI):2||ESD Protection:2||ESD coupling:2||voltage gain:2||AC transport current loss:2||ESD measurements:2||BCI:2||coplanar meander lines:2||Singleended Parallel Bus:2||Phase Compensation:2||Circuit model:2||Planar invertedF antenna:2||ABCD parameter:2||Coupling Transfer Function:2||direct power injection (DPI):2||3D Model:2||Lowest Usable Frequency (LUF):2||Electromagnetic interference:2||electromagnetic compatibility (EMC):2||parameter extraction:2||Crosstalk:2||Timing Jitter:2||Transfer function:2||extended mixedmode Sparameters:2||Bulk current injection (BCI):2||Antenna performance degradation:2||Hybrid simulation:2||EMC qualification:2||Random modulation schemes:2||EFT/B Immunity Test:1||EMI/EMC:1||EOS:1||ESD:1||ESD gun:1||ESD standard waveform:1||Electric power supplies:1||Electric power transmission:1||Electrical characteristics:1||Electrical diagnosis:1||Electrical properties:1||Electromagnetic field interference:1||Electromagnetic interference (EMI):1||Electromagnetic susceptibility (EMS):1||Electrostatic Discharge (ESD) Generator:1||Electrostatic Discharge (ESD) Gun:1||Electrostatic Discharge(ESD):1||Electrostatic discharge (ESD):1||Epoxy:1||Equivalent Circuit:1||Equivalent Circuit (EC):1||Equivalent Circuit Model:1||Equivalent circuit model:1||Equivalent/Electrical Circuit Model (ECM):1||Extended MixedMode SParameters:1||Extended mixedmode Sparameters:1||FEM:1||FPCB:1||Fast calibration:1||Fault diagnosis:1||Finite element analysis:1||Flash light:1||Flexible composites:1||Flip chip:1||FourConductor Lines:1||Frequency Domain Refectometry:1||Frequencydomain Q:1||Grounding Grid:1||Hfield probe:1||Harmonics:1||High frequency:1||HighFrequency:1||HighSpeed Serial Interface Connector:1||Highfrequency circuit model:1||I/O buffer:1||IC stripline:1||IGBT modeling:1||ISO 114522:1||ISO 76372:1||Immunity:1||Immunity Test:1||Immunity test:1||Impedance:1||Impedance Analyzer:1||Impedance Matching:1||Impedance standard substrate:1||Insertion Loss:1||Insertion loss:1||Integrated circuit modeling:1||Integrated circuits:1||Interconnect:1||Interleaved Buck Converter(IBC):1||Interleaved buck converter:1||Isolated Mode Circuits:1||Lprobe fed circular patch antenna:1||LiIon polymer battery:1||Load Dump:1||Local deterioration of power cable:1||Lowest usable frequency (LUF):1||MEMs:1||MLCC:1||Matrix building:1||Mechanical diagnosis:1||Microwave probes:1||Mixed Mode SParameter:1||Mobile Charging Circuit:1||Mode Analysis:1||Modeling:1||Modulus:1||MultiConductor Transmission Line:1||Multiple band antenna:1||Multiport Network:1||Nanocomposites:1||NearField :1||Nearfield immunity test (NFIT):1||Nonconductive film:1||Odd Number Ports:1||Optimization:1||PEEC:1||PMSMdrive braking system:1||PRBS:1||PSO algorithm:1||Parameter extraction:1||Partial Inductance:1||Photoinduced:1||Planer InvertedF Antenna (PIFA):1||Potential Coefficient:1||Potential Fluctuations:1||Power Cable:1||Power distribution network:1||Printed circuits:1||Printed inverted F antenna:1||Probe card:1||Probing measurement:1||Protection resistor:1||Quality factor (Q):1||RC Stirrer:1||RC calibration:1||RC losses:1||RF:1||RLCGParameter Extraction:1||Radar pulse range:1||Radiated emission:1||Radiated immunity (RI) test:1||Radio frequency interference:1||Random PWM(RPWM):1||Randomness level (RL):1||Rational Approximation (RA):1||Reverberation Chamber (RC):1||SMD inductor:1||SOLT:1||Scattering parameter measurement:1||Schmitt Trigger:1||Secondary Cable:1||SemiCustom Verification:1||Shielding Effect:1||Short defect isolation:1||Shortopenloadthrough:1||Signal Integrity:1||Simultaneous switching noise:1||SinglePhase transformer:1||Sintering temperature:1||Statistical Test:1||Stirrer/tuner:1||Stochastic Electromagnetics:1||Stray Capacitance:1||Sweep Frequency Response Analyzer:1||Switching systems:1||TLM method:1||Three phase of transformer:1||ThreeConductor Circuit:1||Time Domain Reflectometry:1||Time Domain Transmissometry:1||Timedomain Q:1||Transfer Impedance:1||Transient injection:1||Transient voltage:1||Transmission circuits:1||Triaxial Method:1||VCO:1||VNA:1||VTMOS:1||Vector Fitting (VF).:1||Vertical Calibration:1||Vertical Connector Pin:1||Vertical through interconnect:1||Voltage Controlled Oscillator (VCO):1||Voltage fluctuation:1||Weak imbalance:1||Wellstirred (ws) condition:1||YBCO coated conductor:1||active Sparameter:1||air gap between layers:1||anisotropic conductive film:1||anisotropic conductive film (ACF):1||antenna performance degradation:1||asymmetrical dipole antenna:1||autonomous emergency braking (AEB):1||bent FPCB:1||binary particle swarm optimization (BPSO):1||busbarPCB type EMI filter:1||cascaded:1||circuit immunity:1||closedloop method:1||common mode:1||commonmode current distribution:1||commonmode radiated emission:1||conducted emission (CE):1||coupling transfer impedance function:1||critical current:1||crossmode Sparameters:1||crosstalk:1||current carrying capacity:1||current division factor:1||current division factors:1||cylindrically assembled conductor:1||deterioration of cables:1||differential via:1||effective permeability:1||effects of geometrical parameters:1||elctromagnetic susceptibility:1||electrical diagnosis:1||electrom:1||electromagnetic immunity:1||electromagnetic interference (EMI):1||electrostatic discharge (ESD):1||electrostatic discharge (ESD) generator:1||equivalent circuit:1||extended mixedmode Sparamters:1||face via:1||fast RC calibration:1||field decay technique:1||field uniformity:1||filtering characteristic:1||flip chip:1||fourport VNA:1||frequency response:1||gap effect:1||hysteresis:1||imbalance difference model:1||immunity:1||impedance discontinuities:1||inductive coupling:1||insulation transformer:1||integrated circuits:1||integrated circuits (ICs):1||interconnect failure:1||interposer:1||inverter:1||joint design:1||joint resistance:1||loss tangent:1||magnet:1||meander line:1||meander lines:1||mechanical diagnosis:1||metal organic deposition:1||microwave:1||mode conversion.:1||modeling:1||monoblock model:1||motor driving system:1||motor modeling:1||motordrive system:1||multiport device:1||multiconductor transmission line:1||multilayer ceramic capacitor (MLCC):1||nearfield coupling:1||new mode conversion matrices:1||noise immunity:1||noise spectrum:1||noise spectrum power:1||nonconductive film:1||nonconductive film (NCF):1||nonuniform current distribution:1||nuclear plant:1||numerical model:1||numerical modeling:1||onchip decoupling capacitor:1||package:1||parasitic parameters:1||partial element method:1||pole figure:1||pole figure analysis:1||polishing:1||polynomial chaos:1||potential transformer:1||power distribution network (PDN):1||power transfer efficiency:1||prediction:1||probe card:1||radiated emission:1||radiative noise:1||radio frequency (RF):1||renormaliza:1||renormalization:1||resistivejoint:1||sausage effect:1||scattering parameter:1||scattering parameters (Sparameters):1||segmented circuit model:1||signal integrity:1||stirrer type:1||superconducting:1||superconductor tape:1||system in package:1||system level ESD:1||texture:1||time domain reflectometry (TDR):1||transfer function:1||transfer impedance:1||transmission line:1||trifluoroacetic acid:1||via transition:1||:1||wellstirred (ws) condition:1||211process:1||3D model:1||4 Port Equivalent Model:1||4Port Calibration Kit:1||4Port Probe Station:1||AC Power Line:1||ADGOF test:1||Active scattering parameters:1||Active scattering parameters (SParameters):1||Ag nanopaste:1||Ag nanowires:1||Analytical models:1||Anisotropic conductive film:1||AntennaTransmission Line:1||Automatic test equipment:1||Automatic test equipment (ATE):1||Automation program:1||Automotive:1||Automotive Transient:1||Bandstop filter:1||Bandstop filter:1||Calibration:1||Calibration kit:1||Cascaded:1||Channel sharing:1||Circuit Model:1||Coaxial Cable Shield:1||Common mode:1||CommonMode SubFilter:1||Commonmode:1||Composite Q:1||Conducted emission:1||Conductive nanopaste:1||Connectors:1||Coplanar structure:1||Coplanar symmetrical meander lines:1||Coupled Lines:1||Coupled Transmission Line:1||Coupledtransmission line:1||Coupling:1||Coupling feed:1||Coupling transfer function:1||Current Division Factors:1||Current division factor:1||Cyclotron:1||DC motor:1||DC/DC Converter:1||DPI:1||DTMOS:1||DeEmbedding Method:1||Degree of Sparameter:1||Diagnosis of power cables:1||Diagnosis of transformer:1||Differential Mode Impedance:1||Differential mode:1||Differential signal channel:1||Differentialmode:1||Direct printing:1||Disturbance Noise Power:1||Dynamic Random Access Memory (DRAM):1||ECU:1||

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(03063) 25-2, SUNGKYUNKWAN-RO, JONGNO-GU, SEOUL, KOREAsamsunglib@skku.edu

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