ScholarWorks@SUNGKYUNKWAN UNIVERSITY: KIM, GIL HO

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KIM, GIL HO (김길호)

Information and Communication Engineering (Electronic and Electrical Engineering)

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MoS2:7||WSe2:5||Dielectrophoresis:4||contact resistance:4||Ballistic:4||Photodetector:3||Nanogap electrodes:3||dielectrophoresis:3||Electrodeposition:3||molybdenum disulfide:3||transition metal dichalcogenides:3||MoTe2:3||Nanoparticles:3||Dielectrophoreis:3||tunneling:3||dual channel:3||GaN:3||Interactions:2||sub>:2||edge contact:2||/sub>:2||electrophoresis:2||Pt nanoparticles:2||twodimensional electron gas:2||2<:2||Anisotropy:2||gate tunable:2||Graphene:2||gold nanoparticles:2||graphene:2||graphene electrode:2||Graphene oxide:2||nanoparticles:2||Nanostructured materials:2||Schottky barrier height:2||2D material:2||Ni nanowires:2||quantum Hall effect:2||Exchange bias:2||hysteresis:2||Shubnikovde Haas:2||FET:2||IIVI semiconductors:2||reduced graphene oxide:2||composite:2||Magnetoresistance:2||Magnetoresistivity:2||diode:2||(2):2||Magnetic properties:1||Magnetron sputtering:1||Mesh electrode:1||Metallic:1||MgO powder:1||Multisegment nanorods:1||Ndoping:1||Nanogap Electrodes:1||Nanohybrid:1||Nanojunction:1||Nanoscale Materials Structure: Fabrication and Characterization:1||Nanostructures:1||Nearfield electrospinning:1||OTFT:1||Optoelectrical characteristics:1||Oxygen plasma:1||PDP:1||Palladium diselenide:1||Palladium nanoparticles:1||Pentacene:1||Photoconductivity:1||Photoresponse:1||Polycrystalline:1||PooleFrenkel effect:1||Protective layer:1||Quantum Hall plateau:1||Quantum cascaded lasers:1||Quantum localization:1||Quantum size effect:1||Quantum wells:1||Raman:1||Raman shift:1||SAW devices:1||Schottky barrier:1||Schottky diode:1||Schottky photodiode:1||Self Assembly:1||Semiconductors:1||Silvaco:1||Silver nanowire:1||SnSe2:1||Spin:1||Subband structure:1||Superparamagnetism:1||THz:1||Temperature Gradient Growth:1||Template synthesis:1||Transition:1||Tungsten diselenide:1||Twodimensional critical magnetic field:1||Twodimensional materials:1||UV sensor:1||VO2 nanowire assembly:1||Vanadium dioxide nanobeams:1||Vanadium dioxide nanowires:1||WS:1||WS<:1||WS2:1||WS2/MoTe2:1||WSe:1||WSe<:1||WSe2 diode:1||WSe2 photodiode:1||ZnO film:1||ZnO nanoparticles:1||annealing:1||black phosphorus:1||charge trap:1||contact doping:1||contact engineering:1||defect:1||doping:1||doublecrystal Xray diffractometer:1||dualchannel:1||edge contacts:1||electrical characteristics:1||electrochemical electrodes:1||electronelectron interaction:1||fieldeffect transistor:1||floatingup:1||flux method:1||gfactor:1||gas sensor:1||gold:1||graphene oxide:1||heavy doping:1||heterostructure:1||heterostructures:1||hexagonal boron nitride:1||hexagonal boron nitride (hBN):1||highresolution transmission electron microscopy:1||hole dephasing:1||hydrazine treatment:1||hydrogen gas sensing:1||insulating state:1||insulatormetal transitions:1||inverters:1||ion gel:1||laser doping:1||laser irradiation:1||lateral pn homojunction:1||longitudinal and Hall magnetoresistance:1||magnetoresistance:1||metal ion:1||metal work function:1||metalinsulator transition:1||metalinterlayersemiconductor structure:1||metalsemiconductor junction:1||mobility:1||modifiedDNA:1||molybdenum sulphide:1||mono and bilayer hBN:1||monolayer:1||multilayer field effect transistor:1||multilayer grapheme:1||ndoping:1||nano device:1||nanobridges:1||nanoelectronics:1||nanofabrication:1||nanoparticles assembly:1||nanorods:1||nanotechnology:1||nanowire:1||nanowires:1||on/off ratio:1||pn diode:1||pn diodes:1||pn junction:1||photoconductivity:1||photoresponse:1||photovoltaic:1||polarity control:1||quantum confinement:1||quantum dots:1||quantum point contact:1||random telegraph signal:1||rectification:1||selfassembly:1||selfbiasing:1||semicircle:1||semiconductor growth:1||sensors:1||silicon oxide:1||silicon substrate:1||spin diffusion:1||spinorbit coupling:1||spinpolarized state:1||spintronics:1||surfacedoping:1||terahertz:1||terahertz spectrum:1||thin film:1||tin oxide:1||transmission line method:1||transport:1||tunneling barrier:1||vacancy:1||van der Waals heterostructure:1||vanadium dioxide:1||vanadium dioxide nanobeams:1||vanadium dioxide thinfilms:1||variable range hopping:1||vdW heterostructures:1||weak localization:1||wide band gap semiconductors:1||work function:1||zinc compounds:1||:1||zinc oxide:1||2D transition metal dichalcogenides:1||2DEG:1||A. Semiconductors:1||Annealing:1||Asymmetric S/D:1||Boltzmann:1||Boron nitride:1||CMOS inverter:1||CVD:1||Chemical vapor deposition:1||Coherent:1||Critical exponent:1||D. Electrical properties:1||D. Surface properties:1||DNA selfassembly:1||Discharge voltage:1||Disorder:1||Domains:1||Drude:1||Electrochemical wet etching:1||Electromigration:1||Electron microscopy:1||Field Effect Transistor:1||Field effect transistor:1||Fieldeffect transistor:1||Flux method:1||Gas sensors:1||Gold Nanoparticles:1||Hall:1||Hybrid devices:1||Hydrazine:1||Hydrogen gas sensor:1||IIVI Semiconductors:1||Insulatormetal transitions:1||Insulatorquantum Hall transition:1||Interference:1||Inverter:1||Joule heating:1||Jouleheating:1||LOphonon scattering:1||LTGaAs:1||Landau levels:1||Layered Chalcogenide Material:1||Lowresistance conducting film:1||Magnetic materials:1||Magnetic mea:1||Magnetic measurements:1||Magnetic properti:1||

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(03063) 25-2, SUNGKYUNKWAN-RO, JONGNO-GU, SEOUL, KOREAsamsunglib@skku.edu

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