ScholarWorks@SUNGKYUNKWAN UNIVERSITY: KIM, HYOUNG SUB

Detailed Information

KIM, HYOUNG SUB (김형섭)

Engineering (Advanced Materials Science and Engineering)

Research Area

Tel
Homepage

ResearcherID ORCiD Scopus Google Scholar ID ResearchGate

Keyword

atomic layer deposition:14||/sub>:8||HfO2:8||sub>:8||Atomic layer deposition:8||Al2O3:7||MoS2:6||In0.53Ga0.47As:4||ZnO:4||Interface:3||:3||Graphene:3||GaAs:3||Thin films:3||silicide:3||2<:3||Cathode interfacial layer:3||Electrical properties:3||Microstructure:3||germanium:2||surface passivation:2||TaN:2||hafnium compounds:2||hafnium oxide:2||Ag nanowire:2||Yttrium doped Zriconium oxide:2||highk:2||transmission electron microscopy:2||PECVD:2||trimethylaluminum:2||InP:2||Zriconium oxide:2||Defect:2||work function:2||x<:2||Thermal stability:2||ZrO2:2||impedance analysis:2||Thin film transistor:2||doping:2||Hafnium oxide:2||Si<:2||plasma treatment:2||electrical properties:2||Ni:2||Interface states:2||Ersilicide:2||leakage currents:2||1−x<:2||MoCl5:2||Ge<:2||HfO<:2||Reliability:2||surface defect:2||XPS:2||Epitaxial layer:1||Epitaxy:1||Er:1||Eutectic solidification:1||FTIR:1||FTIR:1||FWHM:1||FeCrAl alloy:1||Fe2O3:1||FeCr2O4:1||Fermi level:1||Ferroelectric:1||Ferroelectric materials:1||Ferroelectricity:1||Fieldeffect transistors:1||Flexible polymer substrates:1||Fluorocarbon plasma:1||Frequency dispersion:1||Frequency selectivity:1||GS junction:1||Ga diffusion:1||Ga2O3 powder:1||GaN:1||GaSb:1||Gas sensors:1||Gate Stack:1||Ge transistor:1||Germanium telluride:1||Grain boundary:1||Griffith theory:1||HRTEM:1||HRTEM:1||Hafnium seed layer:1||Hafnium zirconium oxide:1||Hexagonal boron nitride nanosheets:1||Hexamethyldisiloxane:1||Hf:1||Hfsilicate:1||Hf0.5Zr0.5O2:1||HfCl4:1||HfO(2):1||HfO2 laminate structure:1||HfO2/Al2O3:1||HfS2:1||High Temperature Oxidation:1||Highk dielectric:1||Highkappa:1||Hydrogen:1||ICPCVD etcher:1||IGZO:1||IGZO TFT:1||IIVI semiconductors:1||IIIV semiconductor:1||ITO:1||ITO electrode:1||ITZO NVM:1||InSitu TEM:1||InAs:1||InGaAs:1||InGaZnO:1||Inorganic compounds:1||Interface state density:1||Interface trap density:1||Interfacial reaction:1||Isothermal Annealing:1||Kelvin probe microscopy:1||Kinetics:1||La(2)O(3):1||Lamellar structure:1||Laser Annealing:1||Laser annealing:1||LiF:1||Low Temperature:1||Low Temperature Bonding:1||Low dielectric constant:1||Lowenergy electron diffraction:1||Lowtemperature polysilicon:1||MEHPPV:1||MEMS:1||MOS capacitor:1||MOSFET:1||Melting:1||Metal oxide:1||Metallocne compunds:1||MgO:1||Microstructures:1||Moalloyed ytterbium:1||MoO2:1||MoO3:1||MoS<:1||MoTe2:1||Molecular beam epitaxy:1||Molecular layer deposition:1||Molybdenum diselenide:1||Molybdenum disulfide:1||Monolithic 3D:1||Morphotroic phase boundary:1||Multifunctionality:1||NEXAFS spectroscopy:1||Na:ZnO:1||Nanostructure:1||Ni Germanide:1||Ni germanide:1||Ni silicide:1||NiSilicide:1||Nisilicide:1||Nickel silicide:1||Nickelsilicide:1||OLED:1||Optical properties:1||Organic Solar Cells:1||Organic light emitting device:1||Organic light emitting diodes:1||Organic solar cells:1||Organic thin film transistors:1||Oxide:1||Oxide semiconductor:1||Oxides:1||P/M:1||PMDA:1||Patterning:1||Pentacene:1||Phase:1||Phase transition:1||Photoinverter:1||Photoelectron spectroscopy:1||Phototransistor:1||Plasma Surface Treatment:1||Plasma damage:1||Plasma enhanced chemical vapor deposition:1||Plasma treatment:1||Polymer solar cell:1||PooleFrenkel effect:1||Pt:1||Pulsed laser annealing:1||Pyrolysis:1||QDLEDs:1||RRAM:1||Resistive switching:1||Rotation of lone pairs:1||SAD:1||SAED:1||Sapphire:1||Schottky:1||Schottky barrier height:1||Schottky barriers:1||Secondary ion mass spectroscopy (SMS):1||Si outdiffusion:1||Si transistor:1||Si: P:1||SiGe:1||Sol gel growth:1||Solgel:1||Solgel chemistry:1||Solution printing:1||Stability:1||Stacked Elemental Layer:1||Strain:1||Structural ledges:1||Structural properties:1||Sub60mV/decade:1||Sulfidation:1||Sulfur treatment:1||Surface recovery:1||Synaptic devices:1||TEMAH:1||TMA:1||Ta:1||Ternary oxides:1||Thermal Treatment:1||Thermal and electrical stress:1||Thin:1||Thin film:1||Thinfilm transistor:1||Ti1xAlxOy:1||Topdown:1||Toplayer thickness:1||Transistor:1||Transition metal dichalcogenide:1||Transmission electron microscopy:1||Transparent conducting oxide:1||Transparent semiconductor ox:1||Trap density:1||Triboelectric nanogenerator:1||Tunneling fieldeffect transistors:1||Twodimensional materials:1||VPE method:1||Vertical:1||WSe2 thickness:1||Xray diffraction:1||Xray photo electron spectroscopy:1||Xray photoemission spectroscopy (XPS):1||XAS:1||Y(CpBut)<:1||YBCO coated conductor:1||YBCO coated conductors:1||Yb silicide:1||Zinc oxide:1||active trim contact:1||adhesion:1||admittance analysis:1||aluminum:1||amorphous carbon:1||amorphous microstructure:1||and nanocrystals:1||anisotropic pattern pitches:1||annealing:1||annealing temperature:1||applications:1||areaselective deposition:1||atomic force microscopy:1||atomic layer deposi:1||atomic layerdeposition:1||atomiclayer deposition:1||barrier layers:1||benzenethiol:1||black phosphorus:1||capacitancevoltage:1||capillary micromolding:1||capping electrode:1||capping layer:1||carbon nanotube:1||casting:1||charge boost:1||chemical bonding force:1||chemical synthesis:1||chemical vapour deposition:1||cobalt:1||conductive filament:1||controllable doping:1||copper diffusion:1||copper interconnect application:1||critical current:1||crystal microstructure:1||current carrying capacity:1||defect states:1||deposition temperature:1||deuterium:1||dielectric:1||dielectric properties:1||dualtemperature process:1||dynamic random access memory:1||electrical characteristics:1||electrical properties and measurements:1||electrical property:1||electrical/electronic materials:1||electron mobility:1||electron transport:1||elemental semiconductors:1||energy band alignment:1||environment dependence:1||epitaxial growth:1||erbium:1||fermilevel pinning:1||ferroelectric:1||ferroelectrics:1||field decay technique:1||films:1||flexible copper clad laminate:1||gas sensor:1||gate dielectrics:1||gate stack:1||germanosilicide:1||grain size:1||graphene:1||hafniumzirconium oxide:1||heterojunction:1||highk dielectric:1||highk dielectric thin films:1||highk dielectrics:1||highkappa:1||highpressure annealing:1||hightemperature effects:1||hydrogen:1||insitu annealing:1||indium phosphide:1||inter:1||interface:1||interface layers:1||interface passivation:1||interface states:1||interfaces:1||interfacial layer:1||interfacial reaction:1||interlayer:1||joint resistance:1||junction leakage current:1||low dielectric constant:1||lowtemperature oxidation:1||melting agglomeration:1||metal–ferroelectric–metal (MFM) capacitor:1||metal–insulator–ferroelectric–metal (MIFM) capacitor:1||metal electrode:1||metal organic deposition:1||metalinduced gap state:1||metalinterlayersemiconductor structure:1||microstructure:1||millisecond annealing:1||millisecond annealing (MSA):1||mobility improvement:1||molybdenum disulfide:1||nanoflowers:1||nanolaminated stru:1||nanoparticles:1||nanostructured materials:1||nanotube:1||nanowire:1||nanowires:1||nanowires synthesis:1||native oxide:1||negative capacitance (NC):1||nodule treatment:1||ohmic contacts:1||organic light emitting diodes:1||orthorhombic:1||oxygen plasma treatment:1||pn heterostructure:1||ptype:1||partial ligand exchange:1||peel strength:1||peroxo group:1||phase separation:1||phototransistor:1||photovoltaic devices:1||plasma doping process:1||pole figure:1||polymer light emitting diodes:1||polymer solar cell:1||postdeposition annealing:1||pretreatment:1||process parameters:1||pulse measurements:1||quantum dot:1||radicals:1||resistivejoint:1||reversible phase transition:1||rolled copper:1||room temperature:1||selfaligned double patterning:1||solutionbased synthesis:1||source/drain contact:1||stacked structure:1||static randomaccess memory (SRAM):1||substrate:1||sulfur vacancy:1||surface diffusion:1||surface functionalization:1||surface treatment:1||tetrakis(dimethylamido)titanium:1||texture:1||th:1||thermal stabil:1||thermal stability:1||thin film transistors:1||thin films:1||trifluoroacetates:1||ultrathin film:1||unipolar transistors:1||van der Waals force:1||wide band gap semiconductors:1||ytterbium:1||zinc compounds:1||3<:1||6HSiC:1||AEM:1||AES:1||ALCVD:1||ALD:1||Admittance analysis:1||Al seed layers:1||Al2O3 passivation:1||Al2O3 passivation layer:1||AlZnO:1||Alucone:1||Amorphous Mooxide:1||Angleresolved photoemission spectroscopy:1||Anhydride material:1||Atomic layer chemical vapor deposition:1||Atomically thin insulator:1||BCl3 plasma:1||Bending:1||Bi2223/Ag tape:1||Bilayer:1||CBED:1||Capacitancevoltage:1||Capacitancevoltage (CV) and conductancevoltage (GV) measurements:1||Carbon:1||Carbon Diffusion:1||Carbon microelectromechanical system:1||Cedoped ZrO2:1||Charge trap memory:1||Chemical reaction:1||Chemical vapor deposition:1||ColeCole plot:1||Composite film:1||Composites:1||Composition:1||Contact resistance:1||Coulometry:1||Crystallinity:1||CuInSe2:1||DFT Calculation:1||Defect states:1||Defects:1||Deposition temperature:1||Dielectric:1||Dielectric Al2O3:1||Dielectric properties:1||Doping:1||EDS:1||Electrical property:1||Electrodeposition:1||Electromagnetic interference shielding:1||Electronic materials:1||Electronic structure:1||Epitaxial Growth:1||

STATISTICS: Total View :0; Today View :0

RSS_1.0 RSS_2.0 ATOM_1.0

(03063) 25-2, SUNGKYUNKWAN-RO, JONGNO-GU, SEOUL, KOREAsamsunglib@skku.edu

Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.

Detailed Information

Keyword

BROWSE