ScholarWorks@SUNGKYUNKWAN UNIVERSITY: CHO, HYUNG KOUN

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CHO, HYUNG KOUN (조형균)

Engineering (Advanced Materials Science and Engineering)

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ZnO:27||GaN:8||Cu2O:7||MOCVD:7||TEM:6||LED:6||Microstructure:5||Sputtering:5||Electrodeposition:5||Metalorganic chemical vapor deposition:5||Oxide semiconductor:5||Zinc oxide:5||ITO:4||Nanowire:4||MgZnO:4||IGZO:4||Nitrides:4||Thermal annealing:4||MoS2:4||Heterojunction:4||Thin film transistor:4||B1. Nitrides:4||zinc compounds:4||buffer layer:3||Atomic layer deposition:3||cuprous oxide:3||Nanorods:3||Thermoelectric:3||Contact resistance:3||Thinfilm transistor:3||oxide semiconductor:3||Hydrogen:3||photoluminescence:3||Ohmic contact:3||DFT:3||Xray diffraction:3||AlZnO:3||InGaN:3||sputtering:3||stability:3||metalorganic chemical vapor deposition:3||Crystal structure:3||Photoelectrochemical:3||Photoelectrochemical water splitting:3||photoelectrochemistry:2||Doping:2||Photoelectrochemical cell:2||phototransistors:2||hybrid structures:2||IIVI semiconductors:2||nZnO:2||Photoluminescence:2||MgO:2||pGaN:2||hydrothermal synthesis:2||electrodeposition:2||TiO2:2||oxide semiconductors:2||Semiconducting IIVI materials:2||Semiconducting IIIV materials:2||Nanostructures:2||Lightemitting diodes (LEDs):2||Thin films:2||Dc sputtering:2||water splitting:2||ALD:2||semiconducting IIVI materials:2||lithiumion batteries:2||low temperature:2||semiconductor growth:2||InGaO3(ZnO)m:2||silicon:2||A3. Metalorganic chemical vapor deposition:2||Planar defects:2||amorphous oxide semiconductor:2||B2. Semiconducting IIIV materials:2||wet etching:2||wide band gap semiconductors:2||Solgel:2||annealing:2||antimony:2||InZnSnO:2||dc sputtering:2||thermal evaporation:2||thermoelectric:2||metalorganic frameworks:2||thin film transistor:2||nanostructured materials:2||thin films:2||Nanocrystals:2||thinfilm transistor (TFT):2||thinfilm transistors:2||Nanomaterials:2||Charge transport:2||Heterostructure:2||nanorod:2||Photocathode:2||A1. Doping:2||morphology:2||Light emitting diodes:2||nanomaterials:2||Surface energy:2||Transmission electron microscopy:2||catalysis:2||Hydrogen evolution reaction:2||Bilayer:2||CuInSe2:2||Nanowires:2||Corrosion behavior:2||Metalorganicframework:2||Ultraviolet:2||Cuprous oxide:2||pType:2||photoelectrochemical:2||pSi:2||Hyperthermia:1||IV:1||IIIV semiconductors:1||Indoped ZnO:1||Insitu electrochemical treatment:1||InAlAs:1||InGaZnO:1||InN:1||Iron oxide:1||LEDs:1||LZO:1||LaNiO3:1||Length uniformity:1||Lightemitting diode:1||Lipid bilayers:1||Low temperature:1||Low temperature process:1||Lowtemperature electrodeposition:1||Luminescence:1||MOCVD growth:1||MQW:1||Magnetic properties:1||Memory effect:1||Metal Induced Chemical Etchin:1||Metal electrode:1||Metalorganic ch:1||Metalorganic chemical vapor deposi:1||Metalorganic chemical vapour deposition:1||Metalorganic vapor phase epitaxy:1||MgxNi1xO:1||Micromolding:1||Microgroove:1||Miscut:1||Mn:1||Mn and Ncodoped ZnO:1||Mo/S–NiSe2:1||Mobility:1||Molecular beam epitaxy:1||Molecular binder:1||Morphology:1||MultiStacked:1||Multispectral synaptic response:1||Multiple functional groups:1||Nface:1||NH3:1||NO 2 gas sensors:1||NO2 gas:1||Nanoferrite:1||Nanorod:1||Nanosheet:1||Nanostructure:1||Nanostructured powder:1||Nanowall:1||Nanowalls:1||Neuronal dendritic computation:1||NiO:1||NiSe2:1||Nitridation:1||Nonpolar GaN:1||Nonpolar:1||Nucleation:1||Nucleation evolution:1||O:1||Optical Properties:1||Optical properties:1||Optical transmittance:1||Optically clear resin films:1||Organic Solar Cells:1||Organic additive:1||Organic pollutant:1||Ostwald ripening:1||Oxide channel:1||Oxide materials:1||Oxide thin film transistor:1||Oxides:1||Oxygen evolution reaction:1||PLD:1||PSS:1||Patterned sapphire substrate (PSS):1||Photoabsorber:1||Photoanode:1||Photocatalyst:1||Photocatalytic dye degradation:1||Photodetector:1||Photodetectors:1||Photoelectrochemical (PEC):1||Photoelectrochemistry:1||Photolumenescence:1||Photonic neurotransistors:1||Phototransistors:1||Photovoltaics:1||Physical vapor deposition processes:1||Plasma treatment:1||Polaraprotic solvents:1||Polydimethylsiloxane:1||Post annealing:1||Postannealing:1||Pourbaix diagram:1||Powerefficiency:1||Preferred orientation:1||Pulsedriven:1||RE sputter:1||RRAM:1||Raman Spectroscopy:1||Raman scattering:1||Rapid thermal annealing:1||Rectifying:1||Redox photoelectrodeposition:1||Repetitive refresh:1||SPS:1||Schottky barriers:1||Schottky diodes:1||Seebeck coefficient:1||Selective:1||Self driving:1||Selfdriven overall cell:1||Semiconducting gallium nitride:1||Semiconductor:1||Semipolar:1||Shell structure:1||Si substrate:1||SilicononInsulator:1||Silver Nanoparticle:1||Single atom catalyst:1||Sintering:1||Sneak current:1||Solgel process:1||Solar Cell:1||Solar window modules:1||Solidstate electrolyte:1||Solution process:1||Spark plasma sintering:1||Stability:1||Stacked Elemental Layer:1||Steam treatment:1||Stereoscopic twodimensional architecture:1||Strain:1||Stress:1||Stresses:1||Structural properties:1||Superlattice:1||TRPL:1||Temperaturenormalized Pisarenko plot:1||Templateassisted electrodeposition:1||Ternary oxides:1||Tetradymite:1||Thermal evaporation:1||Thickness:1||Thin film:1||Thin film transistors:1||Thinfilmtransistor:1||Thinfilmtransistors:1||ThreeStep Selenization:1||Toplayer thickness:1||Transmission Electron:1||Transmission electron microscopy.:1||Transparent conducting oxide:1||Transparent thin film transistors:1||Twodimensional nanocrystals:1||UV:1||UV curing technology:1||UV photodetect:1||Ultraviolet lightemitting diodes (UV LEDs):1||Ultraviolet solution process:1||Visiblelight detection:1||Water oxidation:1||Water splitting:1||Wet spinning:1||XPS:1||Zinc compounds:1||ZnO Electron Transport Layer:1||ZnO TFT:1||ZnO buffer layer:1||ZnO films:1||ZnO flowers:1||ZnO thin films:1||ZnS:1||aIGZO:1||aIGZO TFT:1||alkaline saline water:1||amorphous materials:1||amorphous matrix:1||amorphous oxide semiconductors:1||and Ncodoped ZnO:1||antimony selenide:1||antimony triselenide:1||arrays:1||artificial photonic synapse:1||atomic layer deposition:1||bias stability:1||bismuth vanadate:1||blue:1||bronze/anatase heterojunction:1||bronze/anatase heterojunctions:1||cadmium sulfide:1||cation exchange synthesis:1||chalcogenide semiconductors:1||characterization:1||charge transport:1||charge transport layer:1||chemical doping:1||chemical stability:1||conducting filaments:1||contact resistance:1||cooldown:1||crystallinity:1||dielectric:1||dielectrics:1||dislocation:1||double channels:1||dual electrical property:1||dualphasic TiO2:1||dualphasic TiO2:1||dynamic photoresponse:1||electrical conductivity:1||electrical pr:1||electrical properties:1||electrocatalyst:1||electrochemical forming:1||electrochemical metallization:1||electrochemistry:1||elemental semiconductors:1||energy transfer:1||epitaxial:1||excitonic oscillator strengths:1||excitons:1||flash memory device:1||gallium compounds:1||gas sensor:1||gas sensors:1||green:1||hafniumzinc oxide (HZO):1||high mobility:1||highTC ferromagnetism:1||humidity sensor:1||hydrazine electrooxidation:1||hydrazine oxidation reaction:1||hydrogen:1||hydrogen evolution reaction:1||hydrothermal:1||imperceptible:1||in situ redox:1||insitu annealing:1||inert gas:1||interface control:1||interfacial storage:1||leakage currents:1||light emitting diode:1||lightemitting diode:1||lithium niobate:1||lithium tantalate:1||low working temperature:1||lowconcentration gas detection:1||lowdimensional structures:1||magnetron sputtering:1||mass activity:1||memory effect:1||memorytype sensing:1||metal−organicframework:1||metal oxides:1||metal oxyhydroxide:1||metallization:1||microhillock:1||microstructure:1||mixed linker:1||molybdenumnickel (MoNi) alloy:1||monolayer Au nanoparticles:1||morphological transformation:1||multiquantumwells:1||multivalued logic gates:1||multifunctional channels:1||multilayer channel:1||multilayer electrode:1||multivalent metal cation:1||nZnO/pGaN heterojunction:1||nanocrystals:1||nanodispersions:1||nanoflake structures:1||nanogenerator:1||nanonail:1||nanoparticles:1||nanorods:1||nanosword morphology:1||nanotechnology:1||nanowires:1||nickel:1||nitride:1||nitrides:1||nitrogen dioxide:1||nitrogendoped amorphous carbon:1||noncentrosymmetric gas:1||nonvolatile memory device:1||ohmic contact:1||ordering:1||oxid:1||oxidation:1||oxide:1||oxides:1||oxygen evolution reaction:1||pDoped ZnO:1||pGAN:1||pchannel TFT:1||ptype ZnO:1||ptype doping:1||ptype oxide semiconductor:1||pH engineering:1||patterned substrate:1||perovskites:1||phononexciton interactions:1||phosphorus:1||photoanodes:1||photocathode:1||photocathodes:1||photoelectrochemical reactions:1||phototransistor:1||piezoelectric:1||plasma:1||precursor concentration:1||precursor ratio:1||protection layers:1||protrusion:1||quasitwodimensional oxide:1||rectification:1||red shift:1||reduced graphene oxide:1||resistive randomaccess memory:1||rhodium catalyst:1||roomtemperature recovery:1||s:1||sanochemical:1||sapphire:1||seed layers:1||selfaligned structure:1||semiconducting IIIV materials:1||semiconductor:1||seminconductors:1||solgel:1||solution processing:1||solutionprocess:1||sputter deposition:1||stacking structure:1||sub>:1||superhydrophobicity:1||superlattice:1||thermal annealing:1||thermoelectric material:1||thin film transistors:1||thinfilm transistor:1||thinfilmtransistors:1||threeterminal memory device:1||timeresolved photoluminescence:1||transistors:1||transition metal dichalcogenides:1||transmission electron microscopy:1||transport mechanisms:1||twostep growth:1||ultralow scale Pd:1||ultralow light intensity:1||vacuum deposition:1||various substrates:1||visible light:1||visiblelight photodetection:1||visiblelight sensing:1||water purification:1||zeolitic imidazolate frameworks:1||zinc oxide:1||(2):1||zinc oxide (ZnO):1||/sub>:1||2<:1||A1. Crystal morphology:1||A1. Crystal structure:1||A1. Growth models:1||A1. Low dimensional structures:1||A1. Nanostructures:1||A1. Planar defects:1||A3. Atomic layer epitaxy:1||A3. Metalorganic vapor phase epitaxy:1||A3. Molecular beam epitaxy:1||AES:1||Aldoped ZnO:1||AlGaN:1||AlGaN/GaN:1||Alumina:1||Amphoteric doping:1||Annealing time:1||Anodization:1||Antimony doping:1||Antimony selenide:1||Atomic layer deposition (ALD):1||B1. Oxide:1||B2. Semiconducting IIVI materials:1||B2. Semiconducting IIVI materials:1||B3. Light emitting diodes:1||Ba(Sb:1||Backchannel wetetch process:1||Bi2Te3:1||BiZnO:1||Biometalorganicframework:1||Biomimetic burdock flower:1||Biphasic:1||Bismuth vanadate:1||Buffer layer:1||Builtin potential:1||Catalyst free:1||Catalytic Co3+/Co4+couple exchange states:1||CdS:1||Charge separation:1||Chemical Bath Deposition:1||Chemical reduction:1||Chemical stability:1||Circular transmission line measurement:1||Co(OH)(2):1||Coembedded nitrogendoped carbon:1||Cosputtering:1||Compliance current:1||Composite electrolyte:1||Compositionally graded structure:1||Contact property:1||Copper oxide:1||Coreshell:1||Coulometry:1||Crossbar array:1||Crystal morphology:1||Crystallinity:1||Cu nanowire:1||Cu<:1||Cu(OH)(2):1||CuInSe:1||Custrike method:1||Cu2Se:1||CuO:1||Damp heat test:1||Defect:1||Defect curing:1||Defect reduction:1||Detect healing:1||Doublelayer:1||Dual doping:1||Dual filter:1||Dual morphology:1||Dye adsorbent:1||Dye degradation:1||EL:1||Earth abundant:1||Electrical performance:1||Electrical properties:1||Electrical property:1||Electrical stability:1||Electrochemical Deposition:1||Electrochemical deposition:1||Electrode/channel interface:1||Electroluminescence:1||Electron microscopy:1||Electron reservior layer:1||Electron transport:1||Electronic structure:1||Embeddedabsorber:1||FeOOH:1||Fibersensor:1||Field effect transistors:1||Flexible device:1||Flexible electronics:1||Flexible graphene fibers:1||Gadoped:1||GaAs:1||Gas sensor:1||Gramicidin A:1||Green synthesis:1||Heteroepitaxi:1||Heterogeneous semiconducting structure:1||Heterophasic blended structure:1||HfO:1||HighTC ferromagnetism:1||Hole transport:1||Human Mesenchymal Stem Cell:1||Hump:1||Hybrid channel:1||Hybrid gate dielectrics:1||Hybrid structure:1||Hydrothermal:1||Hydrothermal method:1||

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(03063) 25-2, SUNGKYUNKWAN-RO, JONGNO-GU, SEOUL, KOREAsamsunglib@skku.edu

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