Asymmetric Double-Gate β-Ga 2 O 3 Nanomembrane Field-Effect Transistor for Energy-Efficient Power Devices
- Authors
- Ma, J.; Cho, H.J.; Heo, J.; Kim, S.; Yoo, G.
- Issue Date
- Jun-2019
- Publisher
- Blackwell Publishing Ltd
- Keywords
- asymmetric-gate; beta-gallium oxide; metal-oxide field-effect transistor; metal-semiconductor field-effect transistor
- Citation
- Advanced Electronic Materials, v.5, no.6, pp.1800938
- Journal Title
- Advanced Electronic Materials
- Volume
- 5
- Number
- 6
- Start Page
- 1800938
- URI
- http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/34338
- DOI
- 10.1002/aelm.201800938
- ISSN
- 2199-160X
- Abstract
- The ultra-wide bandgap and cost-effective melt-growth of β-Ga 2 O 3 ensure its advantages over other wide bandgap materials, and competitive electrical performance has been demonstrated in various device structures. In this paper, an asymmetric double-gate (ADG) β-Ga 2 O 3 nanomembrane field-effect transistor (FET) comprised of a bottom-gate (BG) metal-oxide field-effect transistor and a top-gate (TG) metal-semiconductor field-effect transistor (MESFET) is demonstrated. Schottky contact properties are validated by characterizing the lateral Schottky barrier diode (SBD), which exhibits high rectification ratio and low ideality factor. The top-gate β-Ga 2 O 3 MESFET shows reasonable electrical performance with a high breakdown voltage, as anticipated by three terminal off-state breakdown measurement. These properties are further enhanced by double-gate operation, and superior device performance is demonstrated; positive-shifted threshold voltage and reduced subthreshold slope enable the asymmetric double-gate β-Ga 2 O 3 FET to operate at low power, and almost twice as much transconductance is demonstrated for high-frequency operation. These results show the great potential of asymmetric double-gate β-Ga 2 O 3 FETs for energy-efficient high-voltage and -frequency devices with optimal material and structure co-designs. © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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