Low Subthreshold Slope AlGaN/GaN MOS-HEMT with Spike-Annealed HfO2 Gate Dielectric
- Authors
- Yeom, Min Jae; Yang, Jeong Yong; Lee, Chan Ho; Heo, Junseok; Chung, Roy Byung Kyu; Yoo, Geonwook
- Issue Date
- Dec-2021
- Publisher
- MDPI
- Keywords
- MOS-HEMT; ALD HfO2; Spike annealing; ferroelectric
- Citation
- MICROMACHINES, v.12, no.12
- Journal Title
- MICROMACHINES
- Volume
- 12
- Number
- 12
- URI
- http://scholarworks.bwise.kr/ssu/handle/2018.sw.ssu/41946
- DOI
- 10.3390/mi12121441
- ISSN
- 2072-666X
- Abstract
- AlGaN/GaN metal-oxide semiconductor high electron mobility transistors (MOS-HEMTs) with undoped ferroelectric HfO2 have been investigated. Annealing is often a critical step for improving the quality of as-deposited amorphous gate oxides. Thermal treatment of HfO2 gate dielectric, however, is known to degrade the oxide/nitride interface due to the formation of Ga-containing oxide. In this work, the undoped HfO2 gate dielectric was spike-annealed at 600 degrees C after the film was deposited by atomic layer deposition to improve the ferroelectricity without degrading the interface. As a result, the subthreshold slope of AlGaN/GaN MOS-HEMTs close to 60 mV/dec and on/off ratio>10(9) were achieved. These results suggest optimizing the HfO2/nitride interface can be a critical step towards a low-loss high-power switching device.
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