High pressure Raman scattering of a co-evaporated Cu2SnSe3 thin film
- Authors
- Kim, Yongshin; Choi, In-Hwan
- Issue Date
- Feb-2018
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Copper tin selenide; High pressure; Raman; Thin film; Co-evaporation
- Citation
- THIN SOLID FILMS, v.647, pp 9 - 12
- Pages
- 4
- Journal Title
- THIN SOLID FILMS
- Volume
- 647
- Start Page
- 9
- End Page
- 12
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/1197
- DOI
- 10.1016/j.tsf.2017.11.014
- ISSN
- 0040-6090
- Abstract
- We fabricated Cu2SnSe3 thin film on a Mo-coated soda-lime glass substrate by a co-evaporation method. The Xray diffraction pattern revealed the formation of polycrystalline Cu2SnSe3 with a monoclinic structure (space group Cc). Raman scattering measurements were also performed on the thin film at a pressure ranging from 1 atm to 7.01 GPa. The Raman spectrum was resolved into 4 Lorentzian peaks observed at 184 cm(-1), 206 cm(-1,) 236 cm(-1), and 252 cm(-1) at 1 atm, which correspond to A', A", A", and A' symmetry, respectively. The effects of pressure on these Raman-active phonon modes were discussed. The measured elastic properties of Cu2SnSe3 under high pressure were also compared with those of Cu2ZnSnSe4.
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Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
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