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Cited 18 time in webofscience Cited 22 time in scopus
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Design Trends in Fully Integrated 2.4 GHz CMOS SPDT Switches

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dc.contributor.authorBhuiyan, Mohammad Arif Sobhan-
dc.contributor.authorReaz, Mamun Bin Ibne-
dc.contributor.authorJalil, Jubayer-
dc.contributor.authorRahman, Labonnah Farzana-
dc.contributor.authorChang, Tae Gyu-
dc.date.available2019-03-09T00:43:12Z-
dc.date.issued2014-11-01-
dc.identifier.issn1573-4137-
dc.identifier.issn1875-6786-
dc.identifier.urihttps://scholarworks.bwise.kr/cau/handle/2019.sw.cau/13978-
dc.description.abstractFully integrated CMOS single pole double through (SPDT) Transmit/Receive (T/R) switch is an essential component of every compact transceiver for enabling sharing of a single antenna between its transmitter and receiver. The switch is expected to encompass very low insertion loss, relatively higher isolation with high power handling capability. But there is inevitable trade-off among the parameters of the switch which makes the design even more challenging at 2.4 GHz ISM band. This paper presents a bibliographical survey of the work published on improved performance of different switch topologies for 2.4 GHz ISM band transceiver applications. Different techniques reported in literatures for further improvements in the characteristics of CMOS switches are also highlighted. This review will serve as a comparative study and reference for the researchers in designing T/R switches for future 2.4 GHz ISM band applications.-
dc.format.extent10-
dc.language영어-
dc.language.isoENG-
dc.publisherBENTHAM SCIENCE PUBL LTD-
dc.titleDesign Trends in Fully Integrated 2.4 GHz CMOS SPDT Switches-
dc.typeArticle-
dc.identifier.doi10.2174/15734137113096660106-
dc.identifier.bibliographicCitationCURRENT NANOSCIENCE, v.10, no.3, pp 334 - 343-
dc.description.isOpenAccessN-
dc.identifier.wosid000340292300003-
dc.identifier.scopusid2-s2.0-84922479436-
dc.citation.endPage343-
dc.citation.number3-
dc.citation.startPage334-
dc.citation.titleCURRENT NANOSCIENCE-
dc.citation.volume10-
dc.type.docTypeArticle-
dc.publisher.location아랍에미리트-
dc.subject.keywordAuthorCMOS-
dc.subject.keywordAuthorintegrated-
dc.subject.keywordAuthorISM band-
dc.subject.keywordAuthorSPDT-
dc.subject.keywordAuthorT/R switch-
dc.subject.keywordAuthortransceiver-
dc.subject.keywordAuthorwireless-
dc.subject.keywordPlusTRANSMIT-RECEIVE SWITCH-
dc.subject.keywordPlusT/R SWITCH-
dc.subject.keywordPlusWIRELESS APPLICATIONS-
dc.subject.keywordPlusLOW-VOLTAGE-
dc.subject.keywordPlusISM BAND-
dc.subject.keywordPlusPERFORMANCE-
dc.subject.keywordPlusTECHNOLOGY-
dc.subject.keywordPlus2.4-GHZ-
dc.subject.keywordPlus900-MHZ-
dc.relation.journalResearchAreaBiotechnology & Applied Microbiology-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalWebOfScienceCategoryBiotechnology & Applied Microbiology-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
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