Reduction Process of Dislocation and Standby Leakage Current for Embedded Flash Memory Using Nano-Scale Integration
DC Field | Value | Language |
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dc.contributor.author | Sun, Jong-Won | - |
dc.contributor.author | Park, Ji Hwan | - |
dc.contributor.author | Yang, Taek-Seung | - |
dc.contributor.author | Choi, Heesoo | - |
dc.contributor.author | Cui, Yinhua | - |
dc.contributor.author | Choi, Eunmi | - |
dc.contributor.author | Kim, Areum | - |
dc.contributor.author | Oh, Lee Seul | - |
dc.contributor.author | Lee, Sun Jae | - |
dc.contributor.author | Park, Hyunjin | - |
dc.contributor.author | Kim, Chang Hyun | - |
dc.contributor.author | Kim, Soo-Kil | - |
dc.contributor.author | Son, Hyungbin | - |
dc.contributor.author | Lee, Dong Hyun | - |
dc.contributor.author | Pyo, Sung Gyu | - |
dc.date.available | 2019-03-09T01:56:55Z | - |
dc.date.issued | 2013-06 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.issn | 1533-4899 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/14604 | - |
dc.description.abstract | We determined that the use of densification, sacrificial oxidation, gate oxidation and source/drain implantation has the capability to reduce the dislocation. A dislocation-free process is proposed, and its mechanism presented in embedded flash memory. The dislocation decreased when n-type ions were implanted at a low energy level for source and drain. A dry oxidation process using only oxygen without hydrogen and oxidation for logic gates led to the formation of a sacrificial oxide on the rapid thermal oxidation (RTP) methods without densification after gap-filling as reducing dislocation processes. These methods dramatically reduced the standby leakage current. | - |
dc.format.extent | 6 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.title | Reduction Process of Dislocation and Standby Leakage Current for Embedded Flash Memory Using Nano-Scale Integration | - |
dc.type | Article | - |
dc.identifier.doi | 10.1166/jnn.2013.7172 | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.13, no.6, pp 4291 - 4296 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000320205400085 | - |
dc.identifier.scopusid | 2-s2.0-84878733076 | - |
dc.citation.endPage | 4296 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 4291 | - |
dc.citation.title | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.volume | 13 | - |
dc.type.docType | Article | - |
dc.publisher.location | 미국 | - |
dc.subject.keywordAuthor | Embedded Flash Memory | - |
dc.subject.keywordAuthor | Dislocation | - |
dc.subject.keywordAuthor | Leakage Current | - |
dc.subject.keywordAuthor | Rapid Thermal Oxidation | - |
dc.subject.keywordAuthor | Nano Integration | - |
dc.subject.keywordPlus | FLOATING-GATE | - |
dc.subject.keywordPlus | NANOPARTICLES | - |
dc.subject.keywordPlus | TRANSISTOR | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | FILM | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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