On the stability and reliability of Sr1-xBaxSi2O2N2:Eu2+ phosphors for white LED applications
DC Field | Value | Language |
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dc.contributor.author | Cho, I. H. | - |
dc.contributor.author | Anoop, G. | - |
dc.contributor.author | Suh, D. W. | - |
dc.contributor.author | Lee, S. J. | - |
dc.contributor.author | Yoo, Jae Soo | - |
dc.date.available | 2019-03-09T02:42:36Z | - |
dc.date.issued | 2012-09 | - |
dc.identifier.issn | 2159-3930 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/15135 | - |
dc.description.abstract | Sr1-xBaxSi2O2N2:Eu2+ phosphors were synthesized using high temperature solid state reactions and the reliability of the as-synthesized phosphors for White LED applications was investigated. The oxidation resistance of the phosphors was investigated by baking the phosphors at various temperatures in air for 2 hours and also at 85 degrees C, 85% relative humidity for 150 hours. The photo stability of the phosphor was studied by illuminating the phosphor using a high power laser diode (450 nm) at various laser fluxes. Phosphor converted LEDs were fabricated using the assynthesized Sr1-xBaxSi2O2N2:Eu2+ (x = 0 and 0.40) phosphors. The long term stability of the fabricated LEDs was tested by keeping the LEDs at 85 degrees C and 85% relative humidity for 800 hrs. Even though phosphors show high thermal and chemical stability, the electroluminescent (EL) intensity of the fabricated LEDs drops by 15% after 800 hrs of operation. The degradation of EL intensity of the device might be the result of thermally assisted photo-ionization of Eu2+ ions in the phosphor. (c) 2012 Optical Society of America | - |
dc.format.extent | 14 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | OPTICAL SOC AMER | - |
dc.title | On the stability and reliability of Sr1-xBaxSi2O2N2:Eu2+ phosphors for white LED applications | - |
dc.type | Article | - |
dc.identifier.doi | 10.1364/OME.2.001292 | - |
dc.identifier.bibliographicCitation | OPTICAL MATERIALS EXPRESS, v.2, no.9, pp 1292 - 1305 | - |
dc.description.isOpenAccess | Y | - |
dc.identifier.wosid | 000308598300014 | - |
dc.identifier.scopusid | 2-s2.0-84870354076 | - |
dc.citation.endPage | 1305 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 1292 | - |
dc.citation.title | OPTICAL MATERIALS EXPRESS | - |
dc.citation.volume | 2 | - |
dc.type.docType | Article | - |
dc.publisher.location | 미국 | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | LUMINESCENCE PROPERTIES | - |
dc.subject.keywordPlus | PHOTOLUMINESCENCE PROPERTIES | - |
dc.subject.keywordPlus | SILICON-OXYNITRIDE | - |
dc.subject.keywordPlus | YELLOW PHOSPHOR | - |
dc.subject.keywordPlus | REAL STRUCTURE | - |
dc.subject.keywordPlus | EU2+ | - |
dc.subject.keywordPlus | SRSI2O2N2 | - |
dc.subject.keywordPlus | NITRIDE | - |
dc.subject.keywordPlus | SIALON | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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