Investigation on the Ion-Gel Dielectric Characteristics for Graphene Transistor Toward Flexible and Transparent Devices
DC Field | Value | Language |
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dc.contributor.author | Kim, Taegeun | - |
dc.contributor.author | Kim, Un Jeong | - |
dc.contributor.author | Son, Hyung Bin | - |
dc.contributor.author | Hur, Jaehyun | - |
dc.date.available | 2019-01-22T14:21:32Z | - |
dc.date.issued | 2017-09 | - |
dc.identifier.issn | 1947-2935 | - |
dc.identifier.issn | 1947-2943 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/1597 | - |
dc.description.abstract | We systematically investigated the effect of chemical property of ion-gel on the graphene FET performances in terms of on/off ratio, Dirac point voltage, and transconductace. The chemical property of ion-gel was controlled by the various UV-crosslinking conditions for ion gel formation. Our experiments revealed that UV exposure time and composition ratio for the ion-gel dielectric play important roles in modulating graphene FET characteristics. At an optimized condition, our device showed not only very high on/off ratio (similar to 20), but low operable gate-source voltage range (<2 V). Besides, by taking advantages of elastic and transparent properties of our ion-gel, we demonstrated the fabrication of flexible and transparent ion-gel top-gated graphene FET on plastic substrate with high performances. | - |
dc.format.extent | 6 | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.title | Investigation on the Ion-Gel Dielectric Characteristics for Graphene Transistor Toward Flexible and Transparent Devices | - |
dc.type | Article | - |
dc.identifier.doi | 10.1166/sam.2017.3160 | - |
dc.identifier.bibliographicCitation | SCIENCE OF ADVANCED MATERIALS, v.9, no.9, pp 1589 - 1594 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000412929100024 | - |
dc.identifier.scopusid | 2-s2.0-85030832810 | - |
dc.citation.endPage | 1594 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 1589 | - |
dc.citation.title | SCIENCE OF ADVANCED MATERIALS | - |
dc.citation.volume | 9 | - |
dc.type.docType | Article | - |
dc.publisher.location | 미국 | - |
dc.subject.keywordAuthor | Ion-Gel | - |
dc.subject.keywordAuthor | Graphene | - |
dc.subject.keywordAuthor | Transistors | - |
dc.subject.keywordAuthor | Flexible | - |
dc.subject.keywordAuthor | Transparent | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTOR | - |
dc.subject.keywordPlus | SOLAR-CELLS | - |
dc.subject.keywordPlus | GATE | - |
dc.subject.keywordPlus | ELECTRODES | - |
dc.subject.keywordPlus | ENHANCEMENT | - |
dc.subject.keywordPlus | MODULATION | - |
dc.subject.keywordPlus | FREQUENCY | - |
dc.subject.keywordPlus | ENERGY | - |
dc.subject.keywordPlus | CARBON | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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