Characterization of Atomic Layer Deposited Al2O3/HfO2 and Ta2O5/Al2O3 Combination Stacks
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Nam, Minwoo | - |
dc.contributor.author | Kim, Areum | - |
dc.contributor.author | Kang, Keunwon | - |
dc.contributor.author | Choi, Eunmi | - |
dc.contributor.author | Kwon, Soon Hyeong | - |
dc.contributor.author | Lee, Seon Jae | - |
dc.contributor.author | Pyo, Sung Gyu | - |
dc.date.available | 2019-01-22T14:23:55Z | - |
dc.date.issued | 2016-10 | - |
dc.identifier.issn | 1947-2935 | - |
dc.identifier.issn | 1947-2943 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/1787 | - |
dc.description.abstract | We have integrated manufacturable and cost-effective 4 fF/mu m(2) and 8 fF/mu m(2) metal-insulator-metal capacitors with dielectrics by plasma enhanced-atomic layer deposition (PE-ALD), where, the Al interconnects the process for analog/mixed signal technology. The capacitance density, voltage linearity, leakage current, and breakdown voltage properties are evaluated not only for the single layer films of Al2O3, Ta2O5, and HfO2 but also for the combination stacks of Al2O3/Ta2O5/Al2O3 and Al2O3/HfO2/Al2O3 laminated-layers. In comparison, HfO2 as a single layer and Al2O3/HfO2/Al2O3 as a laminated-layer shows better performance than the others. | - |
dc.format.extent | 5 | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.title | Characterization of Atomic Layer Deposited Al2O3/HfO2 and Ta2O5/Al2O3 Combination Stacks | - |
dc.type | Article | - |
dc.identifier.doi | 10.1166/sam.2016.2854 | - |
dc.identifier.bibliographicCitation | Science of Advanced Materials, v.8, no.10, pp 1958 - 1962 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000392836300015 | - |
dc.identifier.scopusid | 2-s2.0-85012066322 | - |
dc.citation.endPage | 1962 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 1958 | - |
dc.citation.title | Science of Advanced Materials | - |
dc.citation.volume | 8 | - |
dc.type.docType | Article | - |
dc.publisher.location | 미국 | - |
dc.subject.keywordAuthor | Al2O3 | - |
dc.subject.keywordAuthor | High-k Dielectric | - |
dc.subject.keywordAuthor | Leakage Current | - |
dc.subject.keywordAuthor | Metal Insulator Metal (MIM) | - |
dc.subject.keywordAuthor | PEALD | - |
dc.subject.keywordPlus | MIM CAPACITORS | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | GATE DIELECTRICS | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | RELIABILITY | - |
dc.subject.keywordPlus | HFO2 | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
84, Heukseok-ro, Dongjak-gu, Seoul, Republic of Korea (06974)02-820-6194
COPYRIGHT 2019 Chung-Ang University All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.