Characterization of a co-evaporated Cu2SnS3 thin-film solar cell
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Yongshin | - |
dc.contributor.author | Choi, In-Hwan | - |
dc.date.available | 2019-05-28T01:41:01Z | - |
dc.date.issued | 2019-01 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/18343 | - |
dc.description.abstract | Cu2SnS3 (CTS) absorber layer was deposited onto a Mo-coated soda-lime glass substrate by sulfurizing a coevaporated Cu-SnS precursor thin film. Phase composition and quality of the layer were examined by X-ray diffraction, Raman spectroscopy and scanning electron microscopy. A solar cell with such CTS absorber layer was characterized by current-voltage, external quantum efficiency, capacitance-voltage, and admittance spectroscopy. The CTS solar cell exhibited a maximum conversion efficiency of 2.01%. Capacitance-voltage measurement showed that CTS absorber had hole carrier concentration of 6.37 x 10(16) cm(-3) and depletion width of 82 nm at room temperature. Admittance spectroscopy showed capacitance steps that might have originated from a deep-level with activation energy and pre-exponential factor of about 0.11 eV and 8.31 x 10(4) s(-1)K(-2), respectively. The concentration of the deep-level defects was estimated to be 5.23 x 10(18) cm(-3). | - |
dc.format.extent | 4 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | Characterization of a co-evaporated Cu2SnS3 thin-film solar cell | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/j.tsf.2018.11.023 | - |
dc.identifier.bibliographicCitation | THIN SOLID FILMS, v.669, pp 351 - 354 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000453405600049 | - |
dc.identifier.scopusid | 2-s2.0-85056668926 | - |
dc.citation.endPage | 354 | - |
dc.citation.startPage | 351 | - |
dc.citation.title | THIN SOLID FILMS | - |
dc.citation.volume | 669 | - |
dc.type.docType | Article | - |
dc.publisher.location | 스위스 | - |
dc.subject.keywordAuthor | Copper tin sulfide | - |
dc.subject.keywordAuthor | Evaporation | - |
dc.subject.keywordAuthor | Thin film | - |
dc.subject.keywordAuthor | Solar cell | - |
dc.subject.keywordAuthor | Admittance | - |
dc.subject.keywordPlus | DEFECT | - |
dc.subject.keywordPlus | CU2ZNSNSE4 | - |
dc.subject.keywordPlus | SULFURIZATION | - |
dc.subject.keywordPlus | ADMITTANCE | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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