Effect of liquid gate bias rising time in pH sensors based on Si nanowire ion sensitive field effect transistors
DC Field | Value | Language |
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dc.contributor.author | Jang, Jungkyu | - |
dc.contributor.author | Choi, Sungju | - |
dc.contributor.author | Kim, Jungmok | - |
dc.contributor.author | Park, Tae Jung | - |
dc.contributor.author | Park, Byung-Gook | - |
dc.contributor.author | Kim, Dong Myong | - |
dc.contributor.author | Choi, Sung-Jin | - |
dc.contributor.author | Lee, Seung Min | - |
dc.contributor.author | Kim, Dae Hwan | - |
dc.contributor.author | Mo, Hyun-Sun | - |
dc.date.available | 2019-05-28T03:39:38Z | - |
dc.date.issued | 2018-02 | - |
dc.identifier.issn | 0038-1101 | - |
dc.identifier.issn | 1879-2405 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/18712 | - |
dc.description.abstract | In this study, we investigate the effect of rising time (TR) of liquid gate bias (VLG) on transient responses in pH sensors based on Si nanowire ion-sensitive field-effect transistors (ISFETs). As TR becomes shorter and pH values decrease, the ISFET current takes a longer time to saturate to the pH-dependent steady-state value. By correlating VLG with the internal gate-to-source voltage of the ISFET, we found that this effect occurs when the drift/diffusion of mobile ions in analytes in response to VLG is delayed. This gives us useful insight on the design of ISFET-based point-of-care circuits and systems, particularly with respect to determining an appropriate rising time for the liquid gate bias. | - |
dc.format.extent | 6 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.title | Effect of liquid gate bias rising time in pH sensors based on Si nanowire ion sensitive field effect transistors | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/j.sse.2017.10.027 | - |
dc.identifier.bibliographicCitation | SOLID-STATE ELECTRONICS, v.140, pp 109 - 114 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000425490800022 | - |
dc.identifier.scopusid | 2-s2.0-85032735185 | - |
dc.citation.endPage | 114 | - |
dc.citation.startPage | 109 | - |
dc.citation.title | SOLID-STATE ELECTRONICS | - |
dc.citation.volume | 140 | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.publisher.location | 영국 | - |
dc.subject.keywordAuthor | Liquid gate bias | - |
dc.subject.keywordAuthor | Rising time | - |
dc.subject.keywordAuthor | Transient response | - |
dc.subject.keywordAuthor | ISFET | - |
dc.subject.keywordAuthor | Si nanowire | - |
dc.subject.keywordAuthor | Drift/diffusion of mobile ions in analyte | - |
dc.subject.keywordPlus | LABEL-FREE | - |
dc.subject.keywordPlus | BIOSENSOR | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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