Use of a cross-linkable or monolayer-forming polymeric buffer layer on PCBM-based n-channel organic field-effect transistors
- Authors
- Kim, Kimyung; Jo, Jeong Hyeok; Kim, Felix Sunjoo
- Issue Date
- Sep-2016
- Publisher
- SPRINGER
- Keywords
- Organic field-effect transistors; Interface engineering; Polymer buffer layer; Electron transport
- Citation
- POLYMER BULLETIN, v.73, no.9, pp 2493 - 2500
- Pages
- 8
- Journal Title
- POLYMER BULLETIN
- Volume
- 73
- Number
- 9
- Start Page
- 2493
- End Page
- 2500
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/19024
- DOI
- 10.1007/s00289-016-1677-4
- ISSN
- 0170-0839
1436-2449
- Abstract
- Fabrication of organic field-effect transistors based on phenyl-C61-butyric acid methyl ester (PCBM) with dielectric bilayers of silicon dioxide and a hydroxyl-free polymer buffer layer was carried out. A polymer buffer layer, which was made of either a cross-linked divinylsilane-bis-benzocyclobutene (BCB) polymer or a polystyrene-based dimethylchlorosilane monolayer (b-PS), turned out to be very smooth and hydrophobic. Cured BCB and two types of b-PS monolayers (M (n) = 8 and 108 kDa) covering SiO2 layers showed water contact angles of 91A degrees, 83A degrees, and 78A degrees and roughness less than a nanometer. Ascribed to favorable properties of insulating layers, high electron mobility values, ranging from 0.073 to 0.10 cm(2)/(V s), and a low threshold voltage (5.3-8.5 V) were obtained.
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Collections - College of Engineering > School of Chemical Engineering and Material Science > 1. Journal Articles
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