Deep centers in a CuInGaSe2/CdS/ZnO:B solar cell
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, In-Hwan | - |
dc.contributor.author | Choi, Chul-Hwan | - |
dc.contributor.author | Lee, Joo-Won | - |
dc.date.available | 2019-05-29T07:33:25Z | - |
dc.date.issued | 2012-06 | - |
dc.identifier.issn | 1862-6300 | - |
dc.identifier.issn | 1862-6319 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/20281 | - |
dc.description.abstract | CuInGaSe2(CIGS)/CdS/ZnO:B heterojunction solar cells and CIGS/Al Schottky junction diodes were fabricated, and the defect centers were examined by capacitancevoltage (CV) measurements and deep-level transient spectroscopy (DLTS). The homogeneity of the junction in the CIGS heterojunction solar cell was examined by electron-beam induced current (EBIC) measurements. The distribution of the defect concentrations in the CIGS absorber layer of the CIGS/CdS/ZnO:B heterojunction changed remarkably with depth. On the other hand, the defect distribution in the CIGS layer of the CIGS Schottky junction was quasi-homogeneous. One electron and one hole trap were observed from CIGS Schottky junction, whereas one electron trap and two hole traps were found in the CIGS/CdS/ZnO:B heterojunction. | - |
dc.format.extent | 6 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.title | Deep centers in a CuInGaSe2/CdS/ZnO:B solar cell | - |
dc.type | Article | - |
dc.identifier.doi | 10.1002/pssa.201127596 | - |
dc.identifier.bibliographicCitation | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.209, no.6, pp 1192 - 1197 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000305122300032 | - |
dc.identifier.scopusid | 2-s2.0-84862190767 | - |
dc.citation.endPage | 1197 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 1192 | - |
dc.citation.title | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | - |
dc.citation.volume | 209 | - |
dc.type.docType | Article | - |
dc.publisher.location | 독일 | - |
dc.subject.keywordAuthor | CIGS solar cells | - |
dc.subject.keywordAuthor | deep centers | - |
dc.subject.keywordAuthor | deep-level transient spectroscopy | - |
dc.subject.keywordAuthor | electron-beam induced currents | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | CUINSE2 | - |
dc.subject.keywordPlus | SEMICONDUCTOR | - |
dc.subject.keywordPlus | CULNSE2 | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
84, Heukseok-ro, Dongjak-gu, Seoul, Republic of Korea (06974)02-820-6194
COPYRIGHT 2019 Chung-Ang University All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.