Effects of metal stacks and patterned metal profiles on the electromigration characteristics in super-thin AlCu interconnects for sub-0.13 mu m technology
DC Field | Value | Language |
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dc.contributor.author | Lee, Min Hyung | - |
dc.contributor.author | Kwon, Yong Min | - |
dc.contributor.author | Pyo, Sung Gyu | - |
dc.contributor.author | Lee, Han Choon | - |
dc.contributor.author | Han, Jae-Won | - |
dc.contributor.author | Paik, Kyung-Wook | - |
dc.date.available | 2019-05-29T13:38:13Z | - |
dc.date.issued | 2011-03 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/21661 | - |
dc.description.abstract | The electromigration (EM) characteristics of super-thin aluminum-copper alloy (AlCu) interconnects for sub-0.13 mu m complementary metal-oxide-semiconductor logic technology were investigated by varying the AlCu underlayers and etched sidewall profile ofAlCu wire. Super-thin AlCu wire with a Ti/TiN underlayer and a smooth etched sidewall profile was confirmed to have the best EM resistance in terms of the mean-time-to-failure (MTTF) and the failure distribution. The Ti/TiN underlayer is believed to lead to a longer MTTF by dramatically reducing the effective current density at the super-thin AlCu film in the entire of EM test line with a smaller formation of TiAl3 at the TiN/AlCu interface. The smooth etched sidewall profile is considered to induce a steeper EM failure distribution by removing the early EM failure at the rough sidewall of aluminum. In terms of the location of EM-induced voids, the super-thin AlCu film inhibits the formation of EM-induced voids directly under the tungsten via by insignificant current crowding at the via-metal line corner. (C) 2011 Elsevier B.V. All rights reserved. | - |
dc.format.extent | 8 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | Effects of metal stacks and patterned metal profiles on the electromigration characteristics in super-thin AlCu interconnects for sub-0.13 mu m technology | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/j.tsf.2011.01.268 | - |
dc.identifier.bibliographicCitation | THIN SOLID FILMS, v.519, no.11, pp 3906 - 3913 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000289333400083 | - |
dc.identifier.scopusid | 2-s2.0-79952739826 | - |
dc.citation.endPage | 3913 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | 3906 | - |
dc.citation.title | THIN SOLID FILMS | - |
dc.citation.volume | 519 | - |
dc.type.docType | Article | - |
dc.publisher.location | 스위스 | - |
dc.subject.keywordAuthor | AlCu | - |
dc.subject.keywordAuthor | Interconnects | - |
dc.subject.keywordAuthor | Electromigration | - |
dc.subject.keywordAuthor | Current crowding | - |
dc.subject.keywordAuthor | AlCu underlayer | - |
dc.subject.keywordAuthor | Sidewall profile | - |
dc.subject.keywordPlus | TIAL3 FORMATION | - |
dc.subject.keywordPlus | BILAYERS | - |
dc.subject.keywordPlus | LINES | - |
dc.subject.keywordPlus | TI | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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