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The effects of staggered bandgap in the InP/CdSe and CdSe/InP core/shell quantum dots
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Sunghoon | - |
| dc.contributor.author | Park, Jaehyun | - |
| dc.contributor.author | Kim, Sungwoo | - |
| dc.contributor.author | Jung, Won | - |
| dc.contributor.author | Sung, Jaeyoung | - |
| dc.contributor.author | Kim, Sang-Wook | - |
| dc.date.available | 2019-05-30T01:33:37Z | - |
| dc.date.issued | 2010-06 | - |
| dc.identifier.issn | 0021-9797 | - |
| dc.identifier.issn | 1095-7103 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/22384 | - |
| dc.description.abstract | New type-II structures of CdSe/InP and InP/CdSe core-shell nanocrystals which have staggered bandgap alignment were fabricated. Using a simple model for the wave function for electrons and holes in InP/CdSe and CdSe/InP core/shell nanocrystals showed the wave function of the electron and hole spread into the shell, respectively. The probability density of the InP/CdSe and CdSe/InP core/shell QDs also showed a similar tendency. As a result, the structure exhibits increased delocalization of electrons and holes, leading to a red-shift in absorption and emission. Quantum yield increased in the InP/CdSe, however decreased in the CdSe/InP. The reason may be due to the surface trap and high activation barrier for de-trapping in the InP shell. (C) 2010 Elsevier Inc. All rights reserved. | - |
| dc.format.extent | 5 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | ACADEMIC PRESS INC ELSEVIER SCIENCE | - |
| dc.title | The effects of staggered bandgap in the InP/CdSe and CdSe/InP core/shell quantum dots | - |
| dc.type | Article | - |
| dc.identifier.doi | 10.1016/j.jcis.2010.03.030 | - |
| dc.identifier.bibliographicCitation | JOURNAL OF COLLOID AND INTERFACE SCIENCE, v.346, no.2, pp 347 - 351 | - |
| dc.description.isOpenAccess | N | - |
| dc.identifier.wosid | 000277482200010 | - |
| dc.identifier.scopusid | 2-s2.0-77952427112 | - |
| dc.citation.endPage | 351 | - |
| dc.citation.number | 2 | - |
| dc.citation.startPage | 347 | - |
| dc.citation.title | JOURNAL OF COLLOID AND INTERFACE SCIENCE | - |
| dc.citation.volume | 346 | - |
| dc.type.docType | Article | - |
| dc.publisher.location | 미국 | - |
| dc.subject.keywordAuthor | Type-II quantum dots | - |
| dc.subject.keywordAuthor | Core-shell | - |
| dc.subject.keywordAuthor | InP | - |
| dc.subject.keywordAuthor | CdSe | - |
| dc.subject.keywordAuthor | Bandgap | - |
| dc.subject.keywordPlus | CORE-SHELL NANOCRYSTALS | - |
| dc.subject.keywordPlus | HIGH-QUALITY INP | - |
| dc.subject.keywordPlus | INP/ZNS NANOCRYSTALS | - |
| dc.subject.keywordPlus | RAPID SYNTHESIS | - |
| dc.subject.keywordPlus | PHOTOPHYSICS | - |
| dc.subject.keywordPlus | GROWTH | - |
| dc.relation.journalResearchArea | Chemistry | - |
| dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
| dc.description.journalRegisteredClass | sci | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
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