Flexible active-matrix organic light-emitting diode display enabled by MoS2 thin-film transistor
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Minwoo | - |
dc.contributor.author | Park, Yong Ju | - |
dc.contributor.author | Sharma, Bhupendra K. | - |
dc.contributor.author | Bae, Sa-Rang | - |
dc.contributor.author | Kim, Soo Young | - |
dc.contributor.author | Ahn, Jong-Hyun | - |
dc.date.available | 2019-03-07T04:45:47Z | - |
dc.date.issued | 2018-04 | - |
dc.identifier.issn | 2375-2548 | - |
dc.identifier.issn | 2375-2548 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/2283 | - |
dc.description.abstract | Atomically thin molybdenum disulfide (MoS2) has been extensively investigated in semiconductor electronics but has not been applied in a backplane circuitry of organic light-emitting diode (OLED) display. Its applicability as an active drive element is hampered by the large contact resistance at the metal/MoS2 interface, which hinders the transport of carriers at the dielectric surface, which in turn considerably deteriorates the mobility. Modified switching device architecture is proposed for efficiently exploiting the high-k dielectric Al2O3 layer, which, when integrated in an active matrix, can drive the ultrathin OLED display even in dynamic folding states. The proposed architecture exhibits 28 times increase in mobility compared to a normal back-gated thin-film transistor, and its potential as a wearable display attached to a human wrist is demonstrated. | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | AMER ASSOC ADVANCEMENT SCIENCE | - |
dc.title | Flexible active-matrix organic light-emitting diode display enabled by MoS2 thin-film transistor | - |
dc.type | Article | - |
dc.identifier.doi | 10.1126/sciadv.aas8721 | - |
dc.identifier.bibliographicCitation | SCIENCE ADVANCES, v.4, no.4 | - |
dc.description.isOpenAccess | Y | - |
dc.identifier.wosid | 000431374900069 | - |
dc.identifier.scopusid | 2-s2.0-85046000602 | - |
dc.citation.number | 4 | - |
dc.citation.title | SCIENCE ADVANCES | - |
dc.citation.volume | 4 | - |
dc.type.docType | Article | - |
dc.publisher.location | 미국 | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | ELECTRONIC SKIN | - |
dc.subject.keywordPlus | LOW-VOLTAGE | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | CIRCUITRY | - |
dc.subject.keywordPlus | CONTACTS | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | SENSOR | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalWebOfScienceCategory | Multidisciplinary Sciences | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
84, Heukseok-ro, Dongjak-gu, Seoul, Republic of Korea (06974)02-820-6194
COPYRIGHT 2019 Chung-Ang University All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.