Preparation of CuGaS2 thin films by two-stage MOCVD method

Abstract

Copper gallium disulfide (CuGaS2; CGS) films were deposited on glass or ITO glass by two-stage metal-organic chemical vapor deposition (MOCVD) method, using Cu- and Ga/S-containing precursors without toxic H2S gas. First, pure Cu thin films were prepared on glass substrates by using a single-source precursor, bis(ethylbutyrylacetato)copper(II) or bis(ethylisobutyrylacetato)copper(II). Second, the resulting Cu films were processed using tris(N,N-ethylbutyldithiocarbamato)gallium(III) at 410-470 degrees C to produce CuGaS2 films. The optical band gap of the CGS film grown at 440 degrees C was about 2.53 eV. In addition, it was found that the elemental ratio of Cu and Ga elements of the CGS films can be elaborately adjusted by controlling deposition conditions on demand. (C) 2008 Elsevier B.V. All rights reserved.