BCB-based wafer-level packaged single-crystal silicon multi-port RF MEMS switch
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, J. -M. | - |
dc.contributor.author | Lee, S. | - |
dc.contributor.author | Baek, C. -W. | - |
dc.contributor.author | Kwon, Y. | - |
dc.contributor.author | Kim, Y. -K. | - |
dc.date.available | 2019-05-30T05:36:46Z | - |
dc.date.issued | 2008-01 | - |
dc.identifier.issn | 0013-5194 | - |
dc.identifier.issn | 1350-911X | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/23867 | - |
dc.description.abstract | A fully wafer-level packaged single-crystal silicon single-pole nine-throw (SP9T) MEMS switch using benzocyclobutene as a packaging adhesive layer is presented. The packaged switch shows an insertion loss of less than 0.6 dB and an average packaging loss of 0.04 dB, and an input to output isolation of better than 35 dB for all of the measured paths with little deviations up to 2 GHz. | - |
dc.format.extent | 2 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | INST ENGINEERING TECHNOLOGY-IET | - |
dc.title | BCB-based wafer-level packaged single-crystal silicon multi-port RF MEMS switch | - |
dc.type | Article | - |
dc.identifier.doi | 10.1049/el:20083288 | - |
dc.identifier.bibliographicCitation | ELECTRONICS LETTERS, v.44, no.2, pp 118 - 119 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000252959500033 | - |
dc.identifier.scopusid | 2-s2.0-38649132284 | - |
dc.citation.endPage | 119 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 118 | - |
dc.citation.title | ELECTRONICS LETTERS | - |
dc.citation.volume | 44 | - |
dc.type.docType | Article | - |
dc.publisher.location | 영국 | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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