Field-effect ion-transport devices with carbon nanotube channels: Schematics and simulations
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, JY | - |
dc.contributor.author | Kang, JW | - |
dc.contributor.author | Byun, KH | - |
dc.contributor.author | Kang, ES | - |
dc.contributor.author | Hwang, HJ | - |
dc.contributor.author | Lee, JH | - |
dc.contributor.author | Lee, HJ | - |
dc.contributor.author | Kwon, OK | - |
dc.contributor.author | Kim, YM | - |
dc.date.available | 2019-05-30T08:36:21Z | - |
dc.date.issued | 2004-08 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.issn | 1976-8524 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/24799 | - |
dc.description.abstract | We investigated field-effect ion-transport devices based on carbon nanotubes by using classical molecular dynamics simulations under applied external force fields, and we present model schematics that can be applied to the nanoscale data storage devices and unipolar ionic field-effect transistors. As the applied external force field is increased, potassium ions rapidly flow through the nanochannel. Under low external force fields, thermal fluctuations of the nanochannels affect tunneling of the potassium ions whereas the effects of thermal fluctuations are negligible under high external force fields. Since the electric current conductivity increases when potassium ions are inserted into fullerenes or carbon nanotubes, the field effect due to the gate, which can modify the position of the potassium ions, changes the tunneling current between the drain and the source. | - |
dc.format.extent | 6 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.title | Field-effect ion-transport devices with carbon nanotube channels: Schematics and simulations | - |
dc.type | Article | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.45, no.2, pp 432 - 437 | - |
dc.identifier.kciid | ART000953513 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000223321200031 | - |
dc.identifier.scopusid | 2-s2.0-4544313651 | - |
dc.citation.endPage | 437 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 432 | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 45 | - |
dc.type.docType | Article | - |
dc.publisher.location | 대한민국 | - |
dc.subject.keywordAuthor | ionic field-effect memory and transistor | - |
dc.subject.keywordAuthor | carbon nanotube | - |
dc.subject.keywordAuthor | nanochannel | - |
dc.subject.keywordAuthor | electro-fluidic flow | - |
dc.subject.keywordPlus | MOLECULAR-DYNAMICS SIMULATIONS | - |
dc.subject.keywordPlus | SHUTTLE MEMORY DEVICE | - |
dc.subject.keywordPlus | FULLERENE | - |
dc.subject.keywordPlus | FLOW | - |
dc.subject.keywordPlus | NANOWIRES | - |
dc.subject.keywordPlus | CRYSTALS | - |
dc.subject.keywordPlus | BUNDLES | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
84, Heukseok-ro, Dongjak-gu, Seoul, Republic of Korea (06974)02-820-6194
COPYRIGHT 2019 Chung-Ang University All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.