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Performance of RF MEMS switches at low temperatures

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dc.contributor.authorSu, H.T.-
dc.contributor.authorLlamas-Garro, I.-
dc.contributor.authorLancaster, M.J.-
dc.contributor.authorPrest, M.-
dc.contributor.authorPark, J.-H.-
dc.contributor.authorKim, J.-M.-
dc.contributor.authorBaek, C.-W.-
dc.contributor.authorKim, Y.-K.-
dc.date.available2019-06-10T09:30:31Z-
dc.date.issued2006-
dc.identifier.issn0013-5194-
dc.identifier.issn1350-911X-
dc.identifier.urihttps://scholarworks.bwise.kr/cau/handle/2019.sw.cau/25581-
dc.description.abstractThe actuation voltage of microelectromechanical system (MEMS) metal switches was investigated at temperatures ranging from 10 to 290K. The investigation shows a 50 increase in the actuation voltage at low temperature. A comparison has been made using a published model and showed similar increment of actuation voltage at low temperature. © The Institution of Engineering and Technology 2006.-
dc.format.extent3-
dc.language영어-
dc.language.isoENG-
dc.titlePerformance of RF MEMS switches at low temperatures-
dc.typeArticle-
dc.identifier.doi10.1049/el:20062551-
dc.identifier.bibliographicCitationElectronics Letters, v.42, no.21, pp 1219 - 1221-
dc.description.isOpenAccessN-
dc.identifier.scopusid2-s2.0-33749988492-
dc.citation.endPage1221-
dc.citation.number21-
dc.citation.startPage1219-
dc.citation.titleElectronics Letters-
dc.citation.volume42-
dc.type.docTypeArticle-
dc.publisher.location영국-
dc.subject.keywordPlusActuation voltage-
dc.subject.keywordPlusLow temperatures-
dc.subject.keywordPlusMetal switches-
dc.subject.keywordPlusActuators-
dc.subject.keywordPlusLow temperature effects-
dc.subject.keywordPlusMathematical models-
dc.subject.keywordPlusVoltage control-
dc.subject.keywordPlusMicroelectromechanical devices-
dc.description.journalRegisteredClassscopus-
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