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Cited 16 time in webofscience Cited 18 time in scopus
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Investigation of Size Dependence on Sensitivity for Nanowire FET Biosensors

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dc.contributor.authorAhn, Jae-Hyuk-
dc.contributor.authorChoi, Sung-Jin-
dc.contributor.authorHan, Jin-Woo-
dc.contributor.authorPark, Tae Jung-
dc.contributor.authorLee, Sang Yup-
dc.contributor.authorChoi, Yang-Kyu-
dc.date.available2019-07-11T02:56:19Z-
dc.date.issued2011-11-
dc.identifier.issn1536-125X-
dc.identifier.urihttps://scholarworks.bwise.kr/cau/handle/2019.sw.cau/27770-
dc.description.abstractLabel-free electrical detection of biomolecules is demonstrated with a double-gate (DG) nanowire (NW) field-effect transistor (FET). Experimental results confirm that detection sensitivity is favorably improved by the increment of NW size in the DG-NWFET, whereas it is enhanced by the decrement of NW size in a conventional single-gate (SG) NWFET. Sensitivity improvement by the augmentation of the NW size in the DG-FET paves the way to overcome technical challenges we face in achieving ultimate miniaturization of the NW size in the SG-FET. This result is comprehensively understood by simple capacitive modeling. The proposed model explains the observed experimental data and provides a design guideline for highly sensitive NW biosensors.-
dc.format.extent7-
dc.language영어-
dc.language.isoENG-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titleInvestigation of Size Dependence on Sensitivity for Nanowire FET Biosensors-
dc.typeArticle-
dc.identifier.doi10.1109/TNANO.2011.2157519-
dc.identifier.bibliographicCitationIEEE TRANSACTIONS ON NANOTECHNOLOGY, v.10, no.6, pp 1405 - 1411-
dc.description.isOpenAccessN-
dc.identifier.wosid000296742300030-
dc.identifier.scopusid2-s2.0-81255146392-
dc.citation.endPage1411-
dc.citation.number6-
dc.citation.startPage1405-
dc.citation.titleIEEE TRANSACTIONS ON NANOTECHNOLOGY-
dc.citation.volume10-
dc.type.docTypeArticle-
dc.publisher.location미국-
dc.subject.keywordAuthorBiosensor-
dc.subject.keywordAuthorcapacitive model-
dc.subject.keywordAuthordouble gate (DG)-
dc.subject.keywordAuthorfield-effect transistor (FET)-
dc.subject.keywordAuthornanowire (NW)-
dc.subject.keywordPlusLABEL-FREE DETECTION-
dc.subject.keywordPlusELECTRICAL DETECTION-
dc.subject.keywordPlusSILICON NANOWIRES-
dc.subject.keywordPlusCARBON NANOTUBES-
dc.subject.keywordPlusDNA HYBRIDIZATION-
dc.subject.keywordPlusNANOSENSORS-
dc.subject.keywordPlusDEVICES-
dc.subject.keywordPlusSENSORS-
dc.subject.keywordPlusMOSFETS-
dc.subject.keywordPlusSURFACE-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClasssci-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
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