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방사광 광전자 분광기를 이용한 Ni/Sic에서의 열처리 온도에 따른 계면 구조 변화 연구
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 韓相允 | - |
| dc.contributor.author | 金鍾奎 | - |
| dc.contributor.author | 金起弘 | - |
| dc.contributor.author | 金秀泳 | - |
| dc.contributor.author | 李鐘覽 | - |
| dc.date.available | 2019-07-16T06:00:20Z | - |
| dc.date.issued | 2002 | - |
| dc.identifier.issn | 1738-8228 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/28840 | - |
| dc.format.extent | 6 | - |
| dc.publisher | 대한금속·재료학회 | - |
| dc.title | 방사광 광전자 분광기를 이용한 Ni/Sic에서의 열처리 온도에 따른 계면 구조 변화 연구 | - |
| dc.title.alternative | Interpretation of Interfacial Structure for Ultra thin Ni film on SiC using Synchrotron Radiation Photoemission Spectroscopy | - |
| dc.type | Article | - |
| dc.identifier.bibliographicCitation | 대한금속·재료학회지, v.40, no.5, pp 556 - 561 | - |
| dc.identifier.kciid | ART000882432 | - |
| dc.description.isOpenAccess | N | - |
| dc.citation.endPage | 561 | - |
| dc.citation.number | 5 | - |
| dc.citation.startPage | 556 | - |
| dc.citation.title | 대한금속·재료학회지 | - |
| dc.citation.volume | 40 | - |
| dc.publisher.location | 대한민국 | - |
| dc.description.journalRegisteredClass | kci | - |
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