Wide frequency switchable microwave resonator by injecting eutectic gallium indium into microfluidic defected ground structure

Abstract

This article proposes a frequency switchable microwave resonator based on a microfluidic defected ground structure (m-DGS) that provides wider frequency tuning ratio. Because its resonant frequency is determined from the DGS geometry, the resonant frequency can be switched by injecting EGaIn liquid metal into the m-DGS to decrease the effective inductance and hence increase resonant frequency to 7.7 GHz from 3 GHz, that is, 88% tuning range. The proposed idea is demonstrated numerically and experimentally. © 2019 Wiley Periodicals, Inc.