Bulk charge-transfer doping of amorphous metal oxide: fullerene blends for solution-processed amorphous indium zinc oxide thin-film transistors
DC Field | Value | Language |
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dc.contributor.author | Le, Minh Nhut | - |
dc.contributor.author | Kim, Hyeongyeon | - |
dc.contributor.author | Kang, Yeo Kyung | - |
dc.contributor.author | Song, Youngmin | - |
dc.contributor.author | Guo, Xugang | - |
dc.contributor.author | Ha, Young-Geun | - |
dc.contributor.author | Kim, Choongik | - |
dc.contributor.author | Kim, Myung-Gil | - |
dc.date.available | 2020-04-16T01:20:12Z | - |
dc.date.issued | 2019-09 | - |
dc.identifier.issn | 2050-7526 | - |
dc.identifier.issn | 2050-7534 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/38476 | - |
dc.description.abstract | The successful implementation of amorphous In-Ga-Zn-O with a mobility >10 cm(2) V-1 s(-1) in the electronic industry indicates the significant potential of the amorphous oxide semiconductor (AOS) materials in the next-generation optoelectronics. However, the low-cost, large-area solution processes for AOS materials require high annealing temperatures (>400 degrees C), which is not favorable for flexible substrate application. Moreover, the lack of a doping method for AOS materials possessing an amorphous disorder structure further limits its application. In this study, a fullerene derivative (C60-malonic acid) was employed as the bulk charge-transfer dopant in solution-processed amorphous indium-zinc oxide (a-IZO) thin-film transistors. With the facile bulk charge-transfer doping from a mixed precursor solution, high-performance thin-film transistors were realized at a low annealing temperature of 250 degrees C. At an optimized doping concentration, the carrier mobility increased from 1.21 cm(2) V-1 s(-1) for an undoped a-IZO film to 2.42 cm(2) V-1 s(-1) for a doped a-IZO one. Furthermore, optimized doping enhanced the device stability under the bias stress condition. Therefore, the threshold voltage (V-th) shift during the positive bias stress condition (V-G = 50 V; V-DS = 25 V) for 1000 s drastically reduced from 28.9 V for an undoped device to 16.0 V for a device with optimized doping (1%). | - |
dc.format.extent | 7 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.title | Bulk charge-transfer doping of amorphous metal oxide: fullerene blends for solution-processed amorphous indium zinc oxide thin-film transistors | - |
dc.type | Article | - |
dc.identifier.doi | 10.1039/c9tc01801h | - |
dc.identifier.bibliographicCitation | JOURNAL OF MATERIALS CHEMISTRY C, v.7, no.34, pp 10635 - 10641 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000483684600022 | - |
dc.identifier.scopusid | 2-s2.0-85071606872 | - |
dc.citation.endPage | 10641 | - |
dc.citation.number | 34 | - |
dc.citation.startPage | 10635 | - |
dc.citation.title | JOURNAL OF MATERIALS CHEMISTRY C | - |
dc.citation.volume | 7 | - |
dc.type.docType | Article | - |
dc.publisher.location | 영국 | - |
dc.subject.keywordPlus | LOW-TEMPERATURE | - |
dc.subject.keywordPlus | HIGH-PERFORMANCE | - |
dc.subject.keywordPlus | CHALCOGENIDE GLASSES | - |
dc.subject.keywordPlus | ACTIVE-LAYER | - |
dc.subject.keywordPlus | IGZO TFT | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | MALONATE | - |
dc.subject.keywordPlus | DRIVE | - |
dc.subject.keywordPlus | ACID | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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