Damascene Cu electrodeposition on metal organic chem-ical vapor deposition-grown Ru thin film barrier
DC Field | Value | Language |
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dc.contributor.author | Cho, SK | - |
dc.contributor.author | Kim, Soo-Kil | - |
dc.contributor.author | Han, H | - |
dc.contributor.author | Kim, JJ | - |
dc.contributor.author | Oh, SM | - |
dc.date.available | 2020-07-29T02:20:34Z | - |
dc.date.issued | 2004-11 | - |
dc.identifier.issn | 1071-1023 | - |
dc.identifier.issn | 2166-2746 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/42424 | - |
dc.description.abstract | Ru thin film grown by metal organic chemical vapor deposition (MOCVD) was applied in this study as a substrate for superconformal Cu electrodeposition as well as a Cu diffusion barrier at a Cu/Ru/SiO2/Si multilayer system for microelectronics. Bis (ethyl-pi-cyclopentadienyl) Ru-based MOCVD Ru thin film had a roughness of about 12% of its thickness and well-developed textures with high purity. It also showed good step coverage in damascene trench structure. Pd catalyst-mediated Cu electrodeposition on Ru surface. accomplished formation of continuous Cu film. For Gap filling in single damascene structure. bumps indicative of bottom-up acceleration and superfilling were observed during two-step Cu electrodeposition on Ru substrate which involved seeding and filling with conventional three additives system. 30 nm-thick Ru film effectively worked as a barrier for interdiffusion and/or reaction between layers even after annealing at 800 degreesC for 30 min. With the exception of slight agglomeration of Cu at elevated temperature, no silicidation or AES-profile broadening was observed in a Cu/Ru/SiO2/Si system. (C) 2004 American Vacuum Society. | - |
dc.format.extent | 5 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | A V S AMER INST PHYSICS | - |
dc.title | Damascene Cu electrodeposition on metal organic chem-ical vapor deposition-grown Ru thin film barrier | - |
dc.type | Article | - |
dc.identifier.doi | 10.1116/1.1819911 | - |
dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.22, no.6, pp 2649 - 2653 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000226439800018 | - |
dc.identifier.scopusid | 2-s2.0-13244279857 | - |
dc.citation.endPage | 2653 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 2649 | - |
dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.citation.volume | 22 | - |
dc.type.docType | Article | - |
dc.publisher.location | 미국 | - |
dc.subject.keywordPlus | COPPER ELECTRODEPOSITION | - |
dc.subject.keywordPlus | SEED LAYER | - |
dc.subject.keywordPlus | TIN | - |
dc.subject.keywordPlus | INTERCONNECTION | - |
dc.subject.keywordPlus | NUCLEATION | - |
dc.subject.keywordPlus | RUTHENIUM | - |
dc.subject.keywordPlus | MODEL | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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