Thin film silver deposition by electroplating for ULSI interconnect applications
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Seo, Joon-Mo | - |
dc.contributor.author | Cho, Sung Ki | - |
dc.contributor.author | Koo, Hyo-Chol | - |
dc.contributor.author | Kim, Soo-Kil | - |
dc.contributor.author | Kwon, Oh Joong | - |
dc.contributor.author | Kim, Jae Jeong | - |
dc.date.available | 2020-07-29T06:20:31Z | - |
dc.date.issued | 2009-01 | - |
dc.identifier.issn | 0256-1115 | - |
dc.identifier.issn | 1975-7220 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/42458 | - |
dc.description.abstract | Ag seed layers were pretreated with 1 : 1,000 diluted nitric acid cleaning solution for 60 s to obtain a clean and oxide-free Ag surface. When an applied potential was less than -800 mV in Ag electroplating, the deposition rate was over 2,000 angstrom/min and the resistivity of Ag deposit was 1.80 mu Omega.cm. But the deposit film became rougher with a negative increase in the potential, and it was also observed through measuring the double layer capacitance. The resistivity of Ag film annealed at 350 degrees C for 30 min was decreased from 1.80 mu Omega.cm to 1.67 mu Omega.cm and the agglomeration of Ag grains was not observed on the surface of the annealed Ag films. To reduce the surface roughness, thiourea was added in the electrolyte and it was decreased below 15 nm. | - |
dc.format.extent | 4 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | KOREAN INSTITUTE CHEMICAL ENGINEERS | - |
dc.title | Thin film silver deposition by electroplating for ULSI interconnect applications | - |
dc.type | Article | - |
dc.identifier.doi | 10.1007/s11814-009-0045-6 | - |
dc.identifier.bibliographicCitation | KOREAN JOURNAL OF CHEMICAL ENGINEERING, v.26, no.1, pp 265 - 268 | - |
dc.identifier.kciid | ART001313142 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000262722500045 | - |
dc.identifier.scopusid | 2-s2.0-59349099822 | - |
dc.citation.endPage | 268 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 265 | - |
dc.citation.title | KOREAN JOURNAL OF CHEMICAL ENGINEERING | - |
dc.citation.volume | 26 | - |
dc.type.docType | Article | - |
dc.publisher.location | 대한민국 | - |
dc.subject.keywordAuthor | ULSI Interconnection | - |
dc.subject.keywordAuthor | Ag | - |
dc.subject.keywordAuthor | Electroplating | - |
dc.subject.keywordPlus | COPPER | - |
dc.subject.keywordPlus | ELECTRODEPOSITION | - |
dc.subject.keywordPlus | THIOUREA | - |
dc.subject.keywordPlus | ENCAPSULATION | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Engineering, Chemical | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
84, Heukseok-ro, Dongjak-gu, Seoul, Republic of Korea (06974)02-820-6194
COPYRIGHT 2019 Chung-Ang University All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.