Light-Emitting Transistors with High Color Purity Using Perovskite Quantum Dot Emitters
DC Field | Value | Language |
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dc.contributor.author | Park, Yu Jung | - |
dc.contributor.author | Kim, Minseong | - |
dc.contributor.author | Song, Aeran | - |
dc.contributor.author | Kim, Jin Young | - |
dc.contributor.author | Chung, Kwun-Bum | - |
dc.contributor.author | Walker, Bright | - |
dc.contributor.author | Seo, Jung Hwa | - |
dc.contributor.author | Wang, Dong Hwan | - |
dc.date.available | 2020-11-16T05:57:50Z | - |
dc.date.issued | 2020-08-05 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.issn | 1944-8252 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/43469 | - |
dc.description.abstract | The class of organic-inorganic lead halides with perovskite crystal structures has recently emerged as promising materials for a variety of practical optoelectronic applications. In particular, hybrid halide perovskite quantum dots possess excellent intrinsic optoelectronic properties such as high color purity (full width at half-maximum of 24.59 nm) and photoluminescence quantum yields (92.7%). In this work, we demonstrate the use of perovskite quantum dot materials as an emissive layer of hybrid light-emitting transistors. To investigate the working mechanism of perovskite quantum dots in light-emitting transistors, we investigated the electrical and optical characteristics under both p-channel and n-channel operation. Using these materials, we have achieved perovskite quantum dot light-emitting transistors with high electron mobilities of up to 12.06 cm(2).V-1 s(-1), high brightness of up to 1.41 x 10(4) cd m(-2), and enhanced external quantum efficiencies of up to 1.79% operating at a source-drain potential of 40 V. | - |
dc.format.extent | 6 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Light-Emitting Transistors with High Color Purity Using Perovskite Quantum Dot Emitters | - |
dc.type | Article | - |
dc.identifier.doi | 10.1021/acsami.0c05537 | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.12, no.31, pp 35175 - 35180 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000558792700068 | - |
dc.identifier.scopusid | 2-s2.0-85089472919 | - |
dc.citation.endPage | 35180 | - |
dc.citation.number | 31 | - |
dc.citation.startPage | 35175 | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 12 | - |
dc.type.docType | Article | - |
dc.publisher.location | 미국 | - |
dc.subject.keywordAuthor | organic-inorganic halide perovskite | - |
dc.subject.keywordAuthor | quantum dot | - |
dc.subject.keywordAuthor | super yellow | - |
dc.subject.keywordAuthor | light-emitting transistors | - |
dc.subject.keywordAuthor | zinc-oxynitride | - |
dc.subject.keywordPlus | SOLAR-CELLS | - |
dc.subject.keywordPlus | DIODES | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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