Piezoelectric hysteresis measurement using atomic force microscopy
DC Field | Value | Language |
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dc.contributor.author | Shin, Hyunjung | - |
dc.contributor.author | Shin, Jung Kyu | - |
dc.contributor.author | Hong, Seungbum | - |
dc.contributor.author | Jeon, Jong Up | - |
dc.contributor.author | Song, Han Wook | - |
dc.contributor.author | Hong, Jong In | - |
dc.contributor.author | No, Kwangsoo | - |
dc.date.available | 2021-02-17T11:41:03Z | - |
dc.date.issued | 2001 | - |
dc.identifier.issn | 1058-4587 | - |
dc.identifier.issn | 1607-8489 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/43726 | - |
dc.description.abstract | Local piezoelectric hysteresis of Pb(Zr,Ti)O-3 thin films were measured using atomic force microscopy and lock-in amplifier. PZT films were prepared by sol-gel processing and rf-sputtering. PZT films exhibit inverse piezoelectric response on application of a voltage. To detect such a small response of the thin (less than 100 run in thickness) PZT films, ac modulation technique was used. Actual displacements were obtained by the calibration of the first harmonic signal (Acostheta) from X-cut quartz crystal (piezoelectric coefficient of 23pm/V). Coercive voltages and the maximum displacements were measured, respectively, from the deconvoluted phase and amplitude. As calibrated, the effective local piezoelectric coefficient were 5.8 and 11.5 in arbitrary unit from sot-gel processed and sputtered films. In case of the PZT films processed by sol-gel technique showed a larger local variation of the piezoelectric response and smaller displacements than the sputtered PZT films with similar film thickness. | - |
dc.format.extent | 8 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | TAYLOR & FRANCIS LTD | - |
dc.title | Piezoelectric hysteresis measurement using atomic force microscopy | - |
dc.type | Article | - |
dc.identifier.doi | 10.1080/10584580108016915 | - |
dc.identifier.bibliographicCitation | INTEGRATED FERROELECTRICS, v.38, no.1-4, pp 31 - 38 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000173066600005 | - |
dc.identifier.scopusid | 2-s2.0-0012069714 | - |
dc.citation.endPage | 38 | - |
dc.citation.number | 1-4 | - |
dc.citation.startPage | 31 | - |
dc.citation.title | INTEGRATED FERROELECTRICS | - |
dc.citation.volume | 38 | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.publisher.location | 영국 | - |
dc.subject.keywordAuthor | atomic force microscopy | - |
dc.subject.keywordAuthor | piezoelectric thin films | - |
dc.subject.keywordAuthor | local piezoelectric hysteresis loop | - |
dc.subject.keywordAuthor | piezoelectric coefficient | - |
dc.subject.keywordPlus | FERROELECTRIC DOMAINS | - |
dc.subject.keywordPlus | POLARIZED DOMAINS | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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