Zirconium oxide dielectric layer grown by a surface sol-gel method for low-voltage, hysteresis-free, and high-mobility polymer field effect transistors
- Authors
- Lim, Byung Tack; Cho, Jangwhan; Cheon, Kwang Hee; Sim, Kyu Min; Shin, Kwonwoo; Chung, Dae Sung
- Issue Date
- Jan-2016
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Dielectric layer; Mobility; Organic semiconductor; Polymer field effect transistor; Surface sol-gel process
- Citation
- ORGANIC ELECTRONICS, v.28, pp 1 - 5
- Pages
- 5
- Journal Title
- ORGANIC ELECTRONICS
- Volume
- 28
- Start Page
- 1
- End Page
- 5
- URI
- https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/45711
- DOI
- 10.1016/j.orgel.2015.10.008
- ISSN
- 1566-1199
1878-5530
- Abstract
- A simple, facile surface sol gel method is introduced for the fabrication of zirconium oxide films for use as a dielectric layer of a solution-processed polymer field effect transistor (PFET). High dielectric strength is demonstrated for a zirconium oxide layer under room-temperature fabrication conditions using a surface sol gel method without any post-treatments, which are typically needed in general sol gel methods. X-ray photoemission spectroscopy showed that the fabricated zirconium oxide layer consists of inorganic ZrO2 and organic alkoxide groups, which can explain its marginal dielectric constant (similar to 9) and continuous film properties. In addition, by finishing the surface sol gel synthesis at the stage of chemisorption, the hydrophobic nature of the final surface was retained, leading to a trap-free semiconductor/dielectric interface. As a result, the PFET made with a conventional polymeric semiconductor rendered nearly hysteresis-free and high mobility (0.3 cm(2)/V) characteristics at low voltage (<2 V). (C) 2015 Elsevier B.V. All rights reserved.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > School of Chemical Engineering and Material Science > 1. Journal Articles
- College of Natural Sciences > Department of Chemistry > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.