A Study on the Corrosion Effects by Addition Complexing Agent in the Copper CMP Process
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Sang-YongKim | - |
dc.contributor.author | Nam-HoonKim | - |
dc.contributor.author | In-PyoKim | - |
dc.contributor.author | Eui-GooChang | - |
dc.contributor.author | Yong-JinSeo | - |
dc.contributor.author | Hun-SangChung | - |
dc.date.accessioned | 2021-06-18T13:44:04Z | - |
dc.date.available | 2021-06-18T13:44:04Z | - |
dc.date.issued | 2003 | - |
dc.identifier.issn | 1229-7607 | - |
dc.identifier.issn | 2092-7592 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/47166 | - |
dc.description.abstract | Copper CMP in terms of the effect of slurry chemicals (oxidizer, corrosion inhibitor, complexing agent) on the process characteristics has been performed. Corrosion inhibitors, benzotriazole (BTA) and tolytriazol (TTA) were used to control the removal rate and avoid isotropic etching. When complexing agent is added with H2O2 2 wt% in the slurry, the corrosion rate was presented very well. In the case of complexing agent, it was estimated that the proper concentration is 1 wt%, because the addition of tartaric acid to alumina slurry causes low pH and the slurry dispersion stability become unstable. There was not much change of the removal rate. It was assumed that BTA 0.05 wt% is suitable. Most of all, it was appeared that BTA is possible to be replaced by TTA. TTA was distinguished for the effect among complexing agents. | - |
dc.format.extent | 4 | - |
dc.publisher | 한국전기전자재료학회 | - |
dc.title | A Study on the Corrosion Effects by Addition Complexing Agent in the Copper CMP Process | - |
dc.type | Article | - |
dc.identifier.bibliographicCitation | Transactions on Electrical and Electronic Materials, v.4, no.6, pp 28 - 31 | - |
dc.identifier.kciid | ART001002577 | - |
dc.description.isOpenAccess | N | - |
dc.citation.endPage | 31 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 28 | - |
dc.citation.title | Transactions on Electrical and Electronic Materials | - |
dc.citation.volume | 4 | - |
dc.publisher.location | 대한민국 | - |
dc.subject.keywordAuthor | Copper-chemical mechanical polishing (Cu-CMP) | - |
dc.subject.keywordAuthor | Corrosion effect | - |
dc.subject.keywordAuthor | Complexing agent | - |
dc.subject.keywordAuthor | Oxidizer | - |
dc.subject.keywordAuthor | Inhibitors | - |
dc.subject.keywordAuthor | Copper-chemical mechanical polishing (Cu-CMP) | - |
dc.subject.keywordAuthor | Corrosion effect | - |
dc.subject.keywordAuthor | Complexing agent | - |
dc.subject.keywordAuthor | Oxidizer | - |
dc.subject.keywordAuthor | Inhibitors | - |
dc.description.journalRegisteredClass | kciCandi | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
84, Heukseok-ro, Dongjak-gu, Seoul, Republic of Korea (06974)02-820-6194
COPYRIGHT 2019 Chung-Ang University All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.