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A Low Cost, Fast-Rising, High-Voltage Pulsed Power Modulator Based on a Discontinuous Conduction Mode Flyback Converter

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dc.contributor.authorLiu, Chang-Yu-
dc.contributor.authorCho, Chan-Gi-
dc.contributor.authorSong, Seung-Ho-
dc.contributor.authorRyoo, Hong-Je-
dc.date.accessioned2021-07-16T03:40:51Z-
dc.date.available2021-07-16T03:40:51Z-
dc.date.issued2020-12-
dc.identifier.issn0093-3813-
dc.identifier.issn1939-9375-
dc.identifier.urihttps://scholarworks.bwise.kr/cau/handle/2019.sw.cau/47560-
dc.description.abstractTreatment of gas and water for environmental applications requires a high-voltage, fast-rising pulse to act on the plasma gas or water treating reactor, but the existing stacked high-voltage pulse generator is arduous to use owing to its large size, high cost, and relatively slow pulse rise time. In this study, we propose a low-cost, small-volume pulsed power modulator that can significantly reduce the cost and volume of the device and shorten the pulse rise time to meet the requirements of gas and water treatment. The proposed pulsed power modulator is based on a discontinuous conduction mode (DCM) flyback converter, and it generates a high-voltage pulse through the resonance of the flyback transformer secondary side inductance and the parallel capacitor. A straightforward spark gap sharpens the generated high-voltage pulse. Finally, a fast-rising, high-voltage pulse with a narrow pulsewidth run on the load is generated. Through PSIM simulation and actual experiments, we validated the feasibility of the proposed pulse generator and obtained 23 kV, 500-Hz pulses with a width of 0.5-mu s width and rise time of 5 ns in actual experiments.-
dc.format.extent7-
dc.language영어-
dc.language.isoENG-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titleA Low Cost, Fast-Rising, High-Voltage Pulsed Power Modulator Based on a Discontinuous Conduction Mode Flyback Converter-
dc.typeArticle-
dc.identifier.doi10.1109/TPS.2020.3034724-
dc.identifier.bibliographicCitationIEEE TRANSACTIONS ON PLASMA SCIENCE, v.48, no.12, pp 4387 - 4393-
dc.description.isOpenAccessN-
dc.identifier.wosid000597782600039-
dc.identifier.scopusid2-s2.0-85096854382-
dc.citation.endPage4393-
dc.citation.number12-
dc.citation.startPage4387-
dc.citation.titleIEEE TRANSACTIONS ON PLASMA SCIENCE-
dc.citation.volume48-
dc.type.docTypeArticle-
dc.publisher.location미국-
dc.subject.keywordAuthorModulation-
dc.subject.keywordAuthorSpark gaps-
dc.subject.keywordAuthorCapacitors-
dc.subject.keywordAuthorInductance-
dc.subject.keywordAuthorSparks-
dc.subject.keywordAuthorLogic gates-
dc.subject.keywordAuthorInsulated gate bipolar transistors-
dc.subject.keywordAuthorConverters-
dc.subject.keywordAuthorhigh-voltage techniques-
dc.subject.keywordAuthorpulse power systems-
dc.subject.keywordPlusDESIGN-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryPhysics, Fluids & Plasmas-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
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