Growth temperature influence on atomic-layer-deposited in2o3 thin films and their application in inorganic perovskite solar cells
DC Field | Value | Language |
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dc.contributor.author | Farva, Umme | - |
dc.contributor.author | Lee, Hyeong Woo | - |
dc.contributor.author | Kim, Ri-Na | - |
dc.contributor.author | Lee, Dong-Gun | - |
dc.contributor.author | Kang, Dong-Won | - |
dc.contributor.author | Kim, Jeha | - |
dc.date.accessioned | 2021-09-17T04:40:27Z | - |
dc.date.available | 2021-09-17T04:40:27Z | - |
dc.date.issued | 2021-08 | - |
dc.identifier.issn | 2079-4991 | - |
dc.identifier.issn | 2079-4991 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/49419 | - |
dc.description.abstract | Recently, indium oxide (In2O3) thin films have emerged as a promising electron transport layer (ETL) for perovskite solar cells; however, solution-processed In2O3 ETL suffered from poor morphology, pinholes, and required annealing at high temperatures. This research aims to carry out and prepare pinhole-free, transparent, and highly conductive In2O3 thin films via atomic layer deposition (ALD) seizing efficiently as an ETL. In order to explore the growth-temperature-dependent properties of In2O3 thin film, it was fabricated by ALD using the triethyl indium (Et3In) precursor. The detail of the ALD process at 115–250 °C was studied through the film growth rate, crystal structure, morphology, composition, and optical and electrical properties. The film growth rate increased from 0.009 nm/cycle to 0.088 nm/cycle as the growth temperature rose from 115 °C to 250 °C. The film thickness was highly uniform, and the surface roughness was below 1.6 nm. Our results con-firmed that film’s structural, optical and electrical properties directly depend on film growth temperature. Film grown at ≥ 200 °C exhibited a polycrystalline cubic structure with almost negligible carbon impurities. Finally, the device ALD-In2O3 film deposited at 250 °C exhibited a power conversion efficiency of 10.97% superior to other conditions and general SnO2 ETL. © 2021 by the authors. Licensee MDPI, Basel, Switzerland. | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | MDPI AG | - |
dc.title | Growth temperature influence on atomic-layer-deposited in2o3 thin films and their application in inorganic perovskite solar cells | - |
dc.type | Article | - |
dc.identifier.doi | 10.3390/nano11082047 | - |
dc.identifier.bibliographicCitation | Nanomaterials, v.11, no.8 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000690059700001 | - |
dc.identifier.scopusid | 2-s2.0-85112167208 | - |
dc.citation.number | 8 | - |
dc.citation.title | Nanomaterials | - |
dc.citation.volume | 11 | - |
dc.type.docType | Article | - |
dc.publisher.location | 스위스 | - |
dc.subject.keywordAuthor | Atomic layer deposition | - |
dc.subject.keywordAuthor | CsPbI2Br | - |
dc.subject.keywordAuthor | Electrical properties | - |
dc.subject.keywordAuthor | Electron transport layer | - |
dc.subject.keywordAuthor | In2O3 | - |
dc.subject.keywordAuthor | Perovskite solar cells | - |
dc.subject.keywordAuthor | XPS analysis | - |
dc.subject.keywordPlus | INDIUM OXIDE | - |
dc.subject.keywordPlus | TRANSPARENT | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | EFFICIENT | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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