Biosensing characteristics of InAs nanowire transistors grown by MOCVD
DC Field | Value | Language |
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dc.contributor.author | Kim, Doo Gun | - |
dc.contributor.author | Hwang, Jeongwoo | - |
dc.contributor.author | Kim, Seon Hoon | - |
dc.contributor.author | Ki, Hyun Chul | - |
dc.contributor.author | Kim, Tae Un | - |
dc.contributor.author | Shin, Jae Cheol | - |
dc.contributor.author | Choi, Young Wan | - |
dc.date.accessioned | 2022-04-14T09:40:25Z | - |
dc.date.available | 2022-04-14T09:40:25Z | - |
dc.date.issued | 2017-02 | - |
dc.identifier.issn | 0277-786X | - |
dc.identifier.issn | 1996-756X | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/56552 | - |
dc.description.abstract | We demonstrated the ion-sensitive field-effect transistors (IS-FETs) based on nanowires (NWs) with different diameters and doping concentrations to obtain the high sensitivity and various applications. The growth of the catalyst-free InAs NWs was carried out using a horizontal reactor MOCVD system (AIXTRON Inc.). A p-type Si (111) wafer (rho = 1 - 10 Omega-cm) was prepared for the NW growth. Here, NWs with diameters of around 50 similar to 150 nm were grown and the doping concentration also was changed around x +/- 10(16 similar to 18)/cm(2). IS-FETs with the grown InAs NWs were fabricated using the photolithography and the lift-off process. The gas sensing characteristics have been investigated through studying the gate response of the NW conductance in different ambient conditions. | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | SPIE-INT SOC OPTICAL ENGINEERING | - |
dc.title | Biosensing characteristics of InAs nanowire transistors grown by MOCVD | - |
dc.type | Article | - |
dc.identifier.doi | 10.1117/12.2253637 | - |
dc.identifier.bibliographicCitation | QUANTUM DOTS AND NANOSTRUCTURES: GROWTH, CHARACTERIZATION, AND MODELING XIV, v.10114 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000406427100022 | - |
dc.identifier.scopusid | 2-s2.0-85020241386 | - |
dc.citation.title | QUANTUM DOTS AND NANOSTRUCTURES: GROWTH, CHARACTERIZATION, AND MODELING XIV | - |
dc.citation.volume | 10114 | - |
dc.type.docType | Proceedings Paper | - |
dc.publisher.location | 미국 | - |
dc.subject.keywordAuthor | Nanowires | - |
dc.subject.keywordAuthor | Field effect transistor | - |
dc.subject.keywordAuthor | MOCVD | - |
dc.subject.keywordAuthor | Biosensor | - |
dc.subject.keywordAuthor | InAs | - |
dc.subject.keywordPlus | SILICON | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scopus | - |
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