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Enhancement of output intensity limit of semiconductor lasers by chemical passivation of mirror facets

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dc.contributor.authorYoo, Jae Soo-
dc.contributor.authorLee, Hong H.-
dc.contributor.authorZory, Peter-
dc.date.accessioned2022-05-11T03:40:19Z-
dc.date.available2022-05-11T03:40:19Z-
dc.date.issued1991-03-
dc.identifier.issn1041-1135-
dc.identifier.issn1941-0174-
dc.identifier.urihttps://scholarworks.bwise.kr/cau/handle/2019.sw.cau/57563-
dc.description.abstractChemical treatment of the mirror facets of semiconductor lasers is used to reduce nonradiative recombination centers, thereby enhancing their peak output power capabilities. Treatment of the surface with P2S5-NH4OH coupled with washing by (NH4)2S can more than double the output intensity limit. However, the enhancement that can be obtained on a consistent basis is lower.-
dc.format.extent2-
dc.language영어-
dc.language.isoENG-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titleEnhancement of output intensity limit of semiconductor lasers by chemical passivation of mirror facets-
dc.typeArticle-
dc.identifier.doi10.1109/68.79753-
dc.identifier.bibliographicCitationIEEE PHOTONICS TECHNOLOGY LETTERS, v.3, no.3, pp 202 - 203-
dc.description.isOpenAccessN-
dc.identifier.wosidA1991FJ07000006-
dc.identifier.scopusid2-s2.0-0026123784-
dc.citation.endPage203-
dc.citation.number3-
dc.citation.startPage202-
dc.citation.titleIEEE PHOTONICS TECHNOLOGY LETTERS-
dc.citation.volume3-
dc.type.docTypeArticle-
dc.publisher.location미국-
dc.subject.keywordPlusGAAS-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaOptics-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryOptics-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
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