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Spin-Pumping-Induced Inverse Spin Hall Effect in Nb/Ni80Fe20 Bilayers and its Strong Decay Across the Superconducting Transition Temperature

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dc.contributor.authorJeon, Kun-Rok-
dc.contributor.authorCiccarelli, Chiara-
dc.contributor.authorKurebayashi, Hidekazu-
dc.contributor.authorWunderlich, Jöerg-
dc.contributor.authorCohen, Lesley F.-
dc.contributor.authorKomori, Sachio-
dc.contributor.authorRobinson, Jason W.A.-
dc.contributor.authorBlamire, Mark G.-
dc.date.accessioned2023-03-08T15:50:37Z-
dc.date.available2023-03-08T15:50:37Z-
dc.date.issued2018-07-
dc.identifier.issn2331-7019-
dc.identifier.issn2331-7019-
dc.identifier.urihttps://scholarworks.bwise.kr/cau/handle/2019.sw.cau/63858-
dc.description.abstractWe quantify the spin Hall angle θSH and spin-diffusion length lsd of Nb from inverse spin Hall effect (ISHE) measurements in Nb/Ni80Fe20 bilayers under ferromagnetic resonance. By varying the Nb thickness tNb and comparing to a Ni80Fe20/Pt reference sample, room temperature values of θSH and lsd for Nb are estimated to be approximately -0.001 and 30 nm, respectively. We also investigate the ISHE as a function of temperature T for different tNb. Above the superconducting transition temperature Tc of Nb, a clear tNb-dependent T evolution of the ISHE is observed whereas below Tc, the ISHE voltage drops rapidly and is below the sensitivity of our measurement setup at a lower T. This suggests the strong decay of the quasiparticle (QP) charge-imbalance relaxation length across Tc, as supported by an additional investigation of the ISHE in a different sample geometry along with model calculation. Our finding suggests careful consideration should be made when developing superconductor spin Hall devices that intend to utilize QP-mediated spin-to-charge interconversion. © 2018 American Physical Society.-
dc.language영어-
dc.language.isoENG-
dc.publisherAmerican Physical Society-
dc.titleSpin-Pumping-Induced Inverse Spin Hall Effect in Nb/Ni80Fe20 Bilayers and its Strong Decay Across the Superconducting Transition Temperature-
dc.typeArticle-
dc.identifier.doi10.1103/PhysRevApplied.10.014029-
dc.identifier.bibliographicCitationPhysical Review Applied, v.10, no.1-
dc.description.isOpenAccessY-
dc.identifier.wosid000439986200002-
dc.identifier.scopusid2-s2.0-85050730156-
dc.citation.number1-
dc.citation.titlePhysical Review Applied-
dc.citation.volume10-
dc.type.docTypeArticle-
dc.publisher.location미국-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
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