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Large scale growth of vertically standing MoS2 flakes on 2D nanosheet using organic promoter

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dc.contributor.authorKang, M.-A.-
dc.contributor.authorKim, S.K.-
dc.contributor.authorHan, J.K.-
dc.contributor.authorKim, S.J.-
dc.contributor.authorChang, S-.J.-
dc.contributor.authorPark, C.-Y.-
dc.contributor.authorMyung, S.-
dc.contributor.authorSong, W.-
dc.contributor.authorLee, S.S.-
dc.contributor.authorLim, J.-
dc.contributor.authorAn, K.-S.-
dc.date.accessioned2023-03-08T16:11:05Z-
dc.date.available2023-03-08T16:11:05Z-
dc.date.issued2017-06-
dc.identifier.issn2053-1583-
dc.identifier.issn2053-1583-
dc.identifier.urihttps://scholarworks.bwise.kr/cau/handle/2019.sw.cau/64054-
dc.description.abstractA facile method was developed for chemical vapor deposition (CVD) growth of large-scale vertically oriented molybdenum disulfide nanoflakes on a basal MoS2 thin film (nu-MoS2 on MoS2-TF) utilizing a porphyrin-type organic promoter layer, which catalyzed the synthesis and allowed large scale growth of v-MoS2 on MoS2-TF. Here, the growing density of the vertical MoS2 flakes was manipulated by adjusting the growth temperature and the thickness of the organic promoter layers. The v-MoS2 on MoS2-TF is even transferrable to arbitrary flexible substrates using the wet-transfer method without inducing noticeable amount of defects. A thin-film transistor was fabricated to determine the electrical property of the v-MoS2 on MoS2-TF film. Significantly, the vertically grown MoS2 was also applicable as the catalyst for hydrogen evolution reaction, which demonstrated a decreased overpotential by 1/3 of those by horizontally grown MoS2 or other CVD-grown crystalline MoS2 thin films previously reported.-
dc.language영어-
dc.language.isoENG-
dc.publisherIOP PUBLISHING LTD-
dc.titleLarge scale growth of vertically standing MoS2 flakes on 2D nanosheet using organic promoter-
dc.typeArticle-
dc.identifier.doi10.1088/2053-1583/aa6049-
dc.identifier.bibliographicCitation2D MATERIALS, v.4, no.2-
dc.description.isOpenAccessN-
dc.identifier.wosid000424403800001-
dc.identifier.scopusid2-s2.0-85020738444-
dc.citation.number2-
dc.citation.title2D MATERIALS-
dc.citation.volume4-
dc.type.docTypeArticle-
dc.publisher.location영국-
dc.subject.keywordAuthormolybdenum disulfide-
dc.subject.keywordAuthorseeding promoter-
dc.subject.keywordAuthorvertical MoS2 growth-
dc.subject.keywordAuthor2D layer-
dc.subject.keywordAuthorhydrogen evolution reaction-
dc.subject.keywordPlusHYDROGEN EVOLUTION REACTION-
dc.subject.keywordPlusCHEMICAL-VAPOR-DEPOSITION-
dc.subject.keywordPlusMOLYBDENUM-DISULFIDE-
dc.subject.keywordPlusGRAPHENE OXIDE-
dc.subject.keywordPlusMONOLAYER MOS2-
dc.subject.keywordPlusATOMIC LAYERS-
dc.subject.keywordPlusPHASE GROWTH-
dc.subject.keywordPlusTHIN-FILM-
dc.subject.keywordPlusPERFORMANCE-
dc.subject.keywordPlusTRANSISTORS-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
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