Schematics and simulations of nanomemory device based on nanopeapods
DC Field | Value | Language |
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dc.contributor.author | Kang, JW | - |
dc.contributor.author | Hwang, HJ | - |
dc.date.accessioned | 2023-03-09T00:35:54Z | - |
dc.date.available | 2023-03-09T00:35:54Z | - |
dc.date.issued | 2005-12 | - |
dc.identifier.issn | 0928-4931 | - |
dc.identifier.issn | 1873-0191 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/65467 | - |
dc.description.abstract | We investigated endo-fullerene shuttle memory elements based on carbon and boron-nitride nanopeapods using atomistic simulations. The systems proposed could operate nonvolatile nanomemory devices or three-terminal nanoswitching devices when the positions of ionized endofullerenes were controlled by gate bias. This work shows a probability of nano-electromechanical memory elements based on nanopeapods in the nanometer ranges, especially, when the electronic properties of boron nitride nanotubes are modified by the fullerene encapsulations. (c) 2005 Elsevier B.V. All rights reserved. | - |
dc.format.extent | 5 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.title | Schematics and simulations of nanomemory device based on nanopeapods | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/j.msec.2005.06.038 | - |
dc.identifier.bibliographicCitation | MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, v.25, no.5-8, pp 843 - 847 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000233784800058 | - |
dc.identifier.scopusid | 2-s2.0-27744570095 | - |
dc.citation.endPage | 847 | - |
dc.citation.number | 5-8 | - |
dc.citation.startPage | 843 | - |
dc.citation.title | MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS | - |
dc.citation.volume | 25 | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.publisher.location | 네델란드 | - |
dc.subject.keywordAuthor | nanopepod memory device | - |
dc.subject.keywordAuthor | bucky shuttle memory device | - |
dc.subject.keywordAuthor | nanononvolatile memory | - |
dc.subject.keywordAuthor | endo-fullerene | - |
dc.subject.keywordAuthor | molecular dynamics simulation | - |
dc.subject.keywordPlus | BORON-NITRIDE NANOTUBES | - |
dc.subject.keywordPlus | MOLECULAR-DYNAMICS SIMULATIONS | - |
dc.subject.keywordPlus | WALL CARBON NANOTUBES | - |
dc.subject.keywordPlus | SHUTTLE MEMORY DEVICE | - |
dc.subject.keywordPlus | ENCAPSULATED C-60 | - |
dc.subject.keywordPlus | ATOMIC-SCALE | - |
dc.subject.keywordPlus | FULLERENES | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | IONS | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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