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Far-infrared/THz photodetector with self-assembled Quantum dots
- Issue Date
- Oct-2005
- Keywords
- Photodetectors; Quantum dot; Teraherz
- Citation
- International Topical Meeting on Microwave Photonics, MWP 2005, v.2005, pp 289 - 292
- Pages
- 4
- Journal Title
- International Topical Meeting on Microwave Photonics, MWP 2005
- Volume
- 2005
- Start Page
- 289
- End Page
- 292
- ISSN
- 0000-0000
- Abstract
- In this paper, we report 21 μm photoresponse with InAs/InGaAs/GaAs quantum-dot-in-a-well photodetector structure. The self-assembled InAs quantum dots were grown on InGaAs/GaAs well structure via atomic layer molecular beam epitaxy and fabricated as intersubbamd photoconductlve structure. The far-infrared/THz 21 μm photoresponse was measured at 4.2K. Photoresponses were observed over the range of λ = 3 μm to 25μm with peaks at 21, 15, 8 μm, respectively.
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Collections - College of Natural Sciences > Department of Physics > 1. Journal Articles
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