Generation of interface states due to quantum-dot growth in Au/GaAs Schottky Diode structures

Abstract

We investigated the low-frequency excess electrical noise characteristics of Au/GaAs Shottky diodes with and without self-assembled InAs quantum-dot layer grown by molecular beam epitaxy. The noise intensity shows 1/f behavior and non-quadratic current dependences. The current dependence is explained by the generation of interface states increasing toward the conduction band edge, in the diodes with quantum-dot layer, utilizing the model of random walk of electrons involving interface states. The extracted energy distributions of the interface states for the diodes with and without quantum-dot layer, are presented. © 2005 American Institute of Physics.