Optical and electrical characterization of quantum dot infrared photodetector structure treated with hydrogen-plasma
DC Field | Value | Language |
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dc.contributor.author | Nam, H.D. | - |
dc.contributor.author | Song, J.D. | - |
dc.contributor.author | Choi, W.J. | - |
dc.contributor.author | Lee, J.I. | - |
dc.contributor.author | Yang, H.S. | - |
dc.date.accessioned | 2023-03-09T00:40:49Z | - |
dc.date.available | 2023-03-09T00:40:49Z | - |
dc.date.issued | 2005-04 | - |
dc.identifier.issn | 0272-9172 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/65522 | - |
dc.description.abstract | We have carried out hydrogen-plasma (H-plasma) treatments on a quantum dot infrared photodetector (QDIP) structure, with a 5-stacked InAs dots in an InGaAs well structure and a Al0.3Ga0.7As/GaAs superlattice barrier. The sample structures were grown by molecular beam epitaxy. The H-plasma treatment has been carried out at 150°C for 3 min - 40 min with 40 seem of H2 gas flow rate and 10 W of RF power. After H-plasma treatment, photoluminescence (PL) intensities of the samples were slightly reduced compared to that of as-grown sample, without any changes in their PL peak position. The dark currents of H-plasma treated samples were much smaller by many orders of magnitudes than that for as-grown sample. The sample exposed to H-plasma for 10 min showed the lowest dark current, enabling the observation of photocurrent with a wide spectrum between 3 - 12 μm at 11 K. © 2005 Materials Research Society. | - |
dc.format.extent | 6 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | Materials Research Society | - |
dc.title | Optical and electrical characterization of quantum dot infrared photodetector structure treated with hydrogen-plasma | - |
dc.type | Article | - |
dc.identifier.doi | 10.1557/proc-864-e9.40 | - |
dc.identifier.bibliographicCitation | Materials Research Society Symposium Proceedings, v.864, pp 433 - 438 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.scopusid | 2-s2.0-30544451850 | - |
dc.citation.endPage | 438 | - |
dc.citation.startPage | 433 | - |
dc.citation.title | Materials Research Society Symposium Proceedings | - |
dc.citation.volume | 864 | - |
dc.type.docType | Conference Paper | - |
dc.subject.keywordPlus | Electric properties | - |
dc.subject.keywordPlus | Infrared radiation | - |
dc.subject.keywordPlus | Photoluminescence | - |
dc.subject.keywordPlus | Semiconductor quantum dots | - |
dc.subject.keywordPlus | H-plasma treatment | - |
dc.subject.keywordPlus | Quantum dot infrared photodetectors (QDIP) | - |
dc.subject.keywordPlus | Photodetectors | - |
dc.description.journalRegisteredClass | scopus | - |
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