Carbon nanotube shuttle memory device based on singlewall-to-doublewall carbon nanotube transition
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kang, J.W. | - |
dc.contributor.author | Hwang, H.J. | - |
dc.date.accessioned | 2023-03-09T00:41:00Z | - |
dc.date.available | 2023-03-09T00:41:00Z | - |
dc.date.issued | 2005-04 | - |
dc.identifier.issn | 0927-0256 | - |
dc.identifier.issn | 1879-0801 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/cau/handle/2019.sw.cau/65524 | - |
dc.description.abstract | This paper shows the schematics, the energetics, and the operations of nonvolatile-nanomemory-element based on carbon nanopeapods using classical molecular dynamics simulations. The system proposed was composed of one-side-capped (10, 10) and a (5, 5) carbon nanotubes. The open ends of two (10, 10) carbon nanotubes were face to face with the separation of 14 angstrom distance. The inner C-180 so carbon nanotube, which was formed by the coalescence of three C-60 molecules, shuttled between two (10, 10) carbon nanotubes under the alternatively applied force fields. Since the inner carbon nanotube can hardly escape from the outer carbon nanotubes without external force fields, the proposed system can operate a nonvolatile memory device. To switch the carbon nanotube shuttle system, the external electric fields to overcome the restoring force as well as the cap-capturing force should be applied. Classical molecular dynamics simulations showed that the carbon nanotube shuttle memory element could be operated by an adequate external force field. (c) 2004 Elsevier B.V. All rights reserved. | - |
dc.format.extent | 8 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.title | Carbon nanotube shuttle memory device based on singlewall-to-doublewall carbon nanotube transition | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/j.commatsci.2004.12.020 | - |
dc.identifier.bibliographicCitation | COMPUTATIONAL MATERIALS SCIENCE, v.33, no.1-3, pp 338 - 345 | - |
dc.description.isOpenAccess | N | - |
dc.identifier.wosid | 000228020500052 | - |
dc.identifier.scopusid | 2-s2.0-14644412934 | - |
dc.citation.endPage | 345 | - |
dc.citation.number | 1-3 | - |
dc.citation.startPage | 338 | - |
dc.citation.title | COMPUTATIONAL MATERIALS SCIENCE | - |
dc.citation.volume | 33 | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.publisher.location | 네델란드 | - |
dc.subject.keywordAuthor | singlewall-to-doublewall carbon nanotube transition | - |
dc.subject.keywordAuthor | nanopeapod | - |
dc.subject.keywordAuthor | memory device | - |
dc.subject.keywordAuthor | shuttle memory device | - |
dc.subject.keywordAuthor | molecular dynamics simulation | - |
dc.subject.keywordPlus | MOLECULAR-DYNAMICS SIMULATIONS | - |
dc.subject.keywordPlus | ENCAPSULATED C-60 | - |
dc.subject.keywordPlus | RAMAN-SCATTERING | - |
dc.subject.keywordPlus | FULLERENE | - |
dc.subject.keywordPlus | WALL | - |
dc.subject.keywordPlus | PEAPODS | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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