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Molecular dynamics simulations of nanomemory element based on boron-nitride nanotube-to-peapod transition
- Authors
- Hwang, H.J.; Choi, W.Y.; Kang, J.W.
- Issue Date
- Apr-2005
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- bulky shuttle memory device; boron-nitride peapod; boron-nitride nanotube; fullerene; molecular dynamics simulation; nano nonvolatile memory
- Citation
- COMPUTATIONAL MATERIALS SCIENCE, v.33, no.1-3, pp 317 - 324
- Pages
- 8
- Journal Title
- COMPUTATIONAL MATERIALS SCIENCE
- Volume
- 33
- Number
- 1-3
- Start Page
- 317
- End Page
- 324
- ISSN
- 0927-0256
1879-0801
- Abstract
- We investigated a nonvolatile nanomemory element based on boron-nitride nanopeapods using molecular dynamics simulations. The suggested system was composed of two boron-nitride nanotubes filled Cu electrodes and fully ionized endo-fullerenes. The two boron-nitride nanotubes were placed face to face and the endo-fullerenes came and went between the two boron-nitride nanotubes under alternatively applied force fields. Since the endo-fullerenes encapsulated in the boron-nitride nanotubes hardly escape from the boron-nitride nanotubes, the proposed system can be considered to be a nonvolatile memory device. Several switching processes were investigated for external force fields using molecular dynamics simulations. (c) 2005 Elsevier B.V. All rights reserved.
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